Paker SI2303 P Channel Enhancement Mode MOSFET Designed for High Density Cell Applications in SOT 23
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Product Description
Product Overview
The SI2303 is a P-Channel Enhancement Mode Power MOSFET designed for high-density cell applications, offering ultra-low on-resistance due to its advanced trench process technology. It is housed in a SOT-23 small outline plastic package and is halogen-free and RoHS compliant.
Product Attributes
- Brand: (Paker Microelectronics)
- Origin: Shenzhen, China
- Package Type: SOT-23 Small Outline Plastic Package
- Certifications: UL:94V-0, Halogen free, RoHS compliant
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Maximum Ratings & Thermal Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=-250A | -30 | -- | -- | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS=-20V, VGS=0V | -- | -- | -1 | uA |
| Gate-Body Leakage Current (IGSS) | VGS=20V, VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, ID=-250A | -1.0 | -1.5 | -3.0 | V |
| Drain-Source On-State Resistance (RDS(on)) | VGS=-4.5V, ID=-2A | -- | 73 | 190 | m |
| Drain-Source On-State Resistance (RDS(on)) | VGS=-10V, ID=-3A | -- | 118 | 330 | m |
| Input Capacitance (CISS) | VDS=-10V, VGS=0V, f=1MHz | -- | 365 | -- | pF |
| Output Capacitance (COSS) | VDS=-10V, VGS=0V, f=1MHz | -- | 60 | -- | pF |
| Reverse Transfer Capacitance (CRSS) | VDS=-10V, VGS=0V, f=1MHz | -- | 45 | -- | pF |
| Total Gate Charge (Qg) | VDS=-15V, ID=-3A, VGS=-10V | -- | 7.5 | -- | nC |
| Gate Source Charge (Qgs) | VDS=-15V, ID=-3A, VGS=-10V | -- | 1.6 | -- | nC |
| Gate Drain Charge (Qgd) | VDS=-15V, ID=-3A, VGS=-10V | -- | 1.2 | -- | nC |
| Turn-on Delay Time (td(on)) | VDS=-15V, ID=-3A, VGS=-10V, RG=2.5 | -- | 3.3 | -- | nS |
| Turn-on Rise Time (tr) | VDS=-15V, ID=-3A, VGS=-10V, RG=2.5 | -- | 18 | -- | nS |
| Turn-off Delay Time (td(off)) | VDS=-15V, ID=-1A, VGS=-10V, RG=2.5 | -- | 18 | -- | nS |
| Turn-off Fall Time (tf) | VDS=-15V, ID=-1A, VGS=-10V, RG=2.5 | -- | 23 | -- | nS |
| Source- Drain Diode Forward on voltage (VSD) | Tj=25, Is=-3A | -- | -- | -1.2 | V |
| Maximum Ratings | |||||
| Symbol | Parameter | Rating | Unit | ||
| VDS | Drain-Source Breakdown Voltage | -30 | V | ||
| VGS | Gate-Source Voltage | 20 | V | ||
| TJ | Maximum Junction Temperature | 150 | C | ||
| TSTG | Storage Temperature Range | -55 to 150 | C | ||
| IS | Diode Continuous Forward Current | -3 | A | (TC=25C) | |
| IDM | Pulse Drain Current | -13 | A | (TC=25C) | |
| ID | Continuous Drain Current | -3 | A | (VGS=10V, TC=25C) | |
| PD | Maximum Power Dissipation | 0.35 | W | (TC=25C) | |
| RJA | Thermal Resistance Junction-to-Ambient | 357 | C/W | ||
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