PANJIT PJA3460-AU R1 000A1 60V N-Channel MOSFET with green molding compound and low RDS ON resistance
Price:
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The PPJA3460-AU is a 60V N-Channel Enhancement Mode MOSFET designed for efficient switching applications. It features low on-state resistance (RDS(ON)) at various gate voltages, advanced trench process technology, and is specially designed for switch load and PWM applications. This MOSFET is AEC-Q101 qualified, lead-free in compliance with EU RoHS 2.0, and uses a green molding compound.
Product Attributes
- Brand: Panjit International Inc.
- Certifications: AEC-Q101 qualified, EU RoHS 2.0 compliant, IEC 61249 standard (Green molding compound)
- Material: Green molding compound
- Origin: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units | ||||
| Static Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | - | - | V | ||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1 | 1.75 | 2.5 | V | ||||
| Drain-Source On-State Resistance | RDS(on) | VGS=10V, ID=2A | - | 55 | 75 | m | ||||
| VGS=4.5V, ID=1A | - | 63 | 90 | m | ||||||
| Zero Gate Voltage Drain Current | IDSS | VDS=48V, VGS=0V | - | - | 1 | uA | ||||
| Gate-Source Leakage Current | IGSS | VGS=+20V, VDS=0V | - | - | +100 | nA | ||||
| Dynamic | Total Gate Charge | Qg | VDS=48V, ID=2A, VGS=10V (Note 1,2) | - | 9.3 | - | nC | |||
| Gate-Source Charge | Qgs | - | - | 2.2 | - | |||||
| Gate-Drain Charge | Qg | - | - | 1.9 | - | |||||
| Capacitance | Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1MHZ | - | 509 | - | pF | |||
| Output Capacitance | Coss | - | - | 47 | - | |||||
| Reverse Transfer Capacitance | Crss | - | - | 23 | - | |||||
| Switching Time | Turn-On Delay Time | td(on) | VDD=30V, ID=2A, VGS=10V, RG=3.3 (Note 1,2) | - | 3.2 | - | ns | |||
| Turn-On Rise Time | tr | - | - | 9.7 | - | |||||
| Turn-Off Delay Time | td(off) | - | - | 18.5 | - | |||||
| Turn-Off Fall Time | tf | - | - | 6.4 | - | |||||
| Drain-Source Diode | Maximum Continuous Drain-Source Diode Forward Current | IS | - | - | - | 2.5 | A | |||
| Diode Forward Voltage | VSD | IS=1A, VGS=0V | - | 0.77 | 1.2 | V | ||||
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