60V N Channel MOSFET PANJIT 2N7002KDW R1 00501 Featuring High Density Cell Design and ESD Protection
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Product Description
Product Overview
The 2N7002KDW is a 60V N-Channel Enhancement Mode MOSFET featuring ESD protection. It utilizes advanced Trench Process Technology and a high-density cell design for ultra-low on-resistance. This MOSFET is specially designed for battery-operated systems and drivers for solid-state relays, displays, and memories. It offers very low leakage current in the off condition and is ESD protected up to 2KV HBM.
Product Attributes
- Certifications: Lead free in compliance with EU RoHS 2.0, Green molding compound as per IEC 61249 standard
- Material: Green molding compound
- Origin: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Static Drain-Source Breakdown Voltage | BVDSS | VGS=0V,ID=10uA | 60 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1 | - | 2.5 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V,ID=500mA | - | - | 3 | |
| VGS=4.5V,ID=200mA | - | - | 4 | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=+20V,VDS=0V | - | - | +10 | nA |
| Forward Transconductance | gfs | VDS=15V, ID=250mA | 100 | - | - | mS |
| Total Gate Charge | Qg | VDS=15V, ID=250mA, VGS=5V | - | 0.8 | - | nC |
| Gate-Source Charge | Qgs | VDS=15V, ID=250mA, VGS=5V | - | 0.35 | - | nC |
| Gate-Drain Charge | Qgd | VDS=15V, ID=250mA, VGS=5V | - | 0.2 | - | nC |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHZ | - | 35 | - | pF |
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1MHZ | - | 13 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1MHZ | - | 8 | - | pF |
| Turn-On Delay Time | td(on) | VDD=30V, ID=200mA, VGS=10V, RG=10 | - | 2.7 | - | ns |
| Turn-On Rise Time | tr | VDD=30V, ID=200mA, VGS=10V, RG=10 | - | 19 | - | ns |
| Turn-Off Delay Time | td(off) | VDD=30V, ID=200mA, VGS=10V, RG=10 | - | 15 | - | ns |
| Turn-Off Fall Time | tf | VDD=30V, ID=200mA, VGS=10V, RG=10 | - | 23 | - | ns |
| Drain-Source Diode Forward Current | IS | - | - | - | 250 | mA |
| Diode Forward Voltage | VSD | IS=200mA, VGS=0V | - | 0.82 | 1.3 | V |
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Sellina