Panjit BSS138 R1 00001 N Channel Enhancement Mode MOSFET 50V with Low Leakage Current and ESD Protection
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Product Description
BSS138 - 50V N-Channel Enhancement Mode MOSFET - ESD Protected
The BSS138 is a 50V N-Channel Enhancement Mode MOSFET with ESD protection, designed for battery-operated systems and solid-state relays. It features advanced trench process technology and a high-density cell design for ultra-low on-resistance. Its very low leakage current in the off-condition makes it suitable for applications such as relays, displays, lamps, solenoids, and memories.
Product Attributes
- Brand: Panjit International Inc.
- Certifications: Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive), Green molding compound as per IEC61249 Std. (Halogen Free)
Technical Specifications
| Parameter | Symbol | Limit | Units | Test Conditions | Min. | Typ. | Max. |
| Maximum Ratings and Thermal Characteristics | |||||||
| Drai n-Source V oltage | V DSS | 50 | V | ||||
| Gate-S ource Voltage | V GS | +20 | V | ||||
| Continuous Drai n C urrent | ID | 300 | mA | (TA=25OC unless otherwise noted) | |||
| Pulsed Drai n C urrent | IDM | 2000 | mA | (Note 1) | |||
| Maxi mum P ower D i ssi pation | PD | 350 | mW | TA=25 OC | |||
| Maxi mum P ower D i ssi pation | PD | 210 | mW | TA=75 OC | |||
| Operati ng Junction and S torage Temperature Range | TJ,TSTG | -55 to + 150 | OC | ||||
| Junction-to Ambient Thermal Resistance(PCB mounted) | R JA | 357 | OC/W | (Note 2) | |||
| Electrical Characteristics | |||||||
| Drai n-Source B reakdown Voltage | BV DSS | 50 | V | V GS=0V , ID=10A | |||
| Gate Threshold Voltage | V GS(th) | V | V DS=V GS , ID=250A | 0.8 | 1.5 | ||
| D rai n-Source O n-State Resi stance | R DS(on) | VGS=2.5V , I D=100mA | 2.8 | 6.0 | |||
| D rai n-Source O n-State Resi stance | R DS(on) | VGS=4.5V , I D=200mA | 1.8 | 4.0 | |||
| D rai n-Source O n-State Resi stance | R DS(on) | VGS=10V , I D=500mA | 1.6 | 3.0 | |||
| Zero Gate Voltage D rai n C urrent | IDS S | A | VDS=50V , VGS=0V | 1 | |||
| Gate Body Leakage | IGS S | A | V GS=+20V , V DS=0V | +10 | |||
| Forward Transconductance | g fS | 100 | mS | V DS=10V , ID=250mA | |||
| Total Gate C harge | Q g | nC | V DS=25V, ID=250mA VGS=4.5V | 1.0 | |||
| Turn-On Ti me | t on | ns | VDD=30V , RL=100 ID=300mA , VGEN=10V RG=6 | 40 | |||
| Turn-Off Ti me | t off | ns | 150 | ||||
| Input C apaci tance | C i ss | pF | V DS=25V , V GS=0V f=1.0MHZ | 50 | |||
| Output C apaci tance | C oss | pF | |||||
| Reverse Transfer C apaci tance | C rss | pF | |||||
| D i ode F orward Voltage | V SD | V | IS=250mA , VGS=0V | 0.82 | 1.2 | ||
| C onti nuous D i ode F orward C urrent | IS | 300 | mA | ||||
| Pulse D i ode F orward C urrent | ISM | 2000 | mA | ||||
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