Electrically isolated dual transistor pairs NPN PNP PANJIT BC847BPN R1 00001 surface mount package

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Product Description

BC847BPN DUAL SURFACE MOUNT NPN/PNP TRANSISTORS (COMPLIMENTARY)

The BC847BPN is a dual surface mount transistor package containing two electrically-isolated complimentary NPN and PNP general-purpose transistors. This device is ideal for portable applications where board space is at a premium.

Product Attributes

Brand: Panjit
Certifications: EU RoHS 2.0, IEC 61249 standard
Material: Green molding compound
Type: Electrically-Isolated Complimentary Transistor Pairs

Technical Specifications

Parameter	NPN Symbol	Value	Units	PNP Symbol	Value	Units
Collector-Base Voltage	V_CBO	50	V	V_CBO	-50	V
Collector-Emitter Voltage	V_CEO	45	V	V_CEO	-45	V
Emitter-Base Voltage	V_EBO	6.0	mA	V_EBO	-5.0	mA
Collector Current	I_C	100	mA	I_C	-100	mA
Total Power Dissipation	P_D	200	mW	P_D	200	mW
Operating Junction Temperature Range	T_J	-55 to +150	C	T_J	-55 to +150	C
Storage Temperature Range	T_stg	-55 to +150	C	T_stg	-55 to +150	C
Thermal Resistance, Junction to Ambient	R_thja	556	C/W	R_thja	556	C/W
Collector-Emitter Breakdown Voltage	V_(BR)CEO	45	V	V_(BR)CEO	-45	V
Collector-Base Breakdown Voltage	V_(BR)CBO	50	V	V_(BR)CBO	-50	V
Emitter-Base Breakdown Voltage	V_(BR)EBO	6.0	V	V_(BR)EBO	-5.0	V
Collector Cutoff Current	I_CBO	5	uA	I_CBO	-5.0	uA
Emitter Cutoff Current	I_EBO	100	nA	I_EBO	-100	nA
DC Current Gain	h_FE	200 - 450	-	h_FE	200 - 475	-
Collector-Emitter Saturation Voltage	V_CE(SAT)	0.4	V	V_CE(SAT)	-0.65	V
Base-Emitter Saturation Voltage	V_BE(SAT)	0.75	V	V_BE(SAT)	-0.7	V
Base-Emitter Voltage	V_BE	0.7	V	V_BE	-0.75	V
Gain-Bandwidth Product	f_T	100	MHz	f_T	100	MHz
Collector-Base Capacitance	C_CB	1.5	pF	C_CB	4.5	pF
Emitter-Base Capacitance	C_EB	7	pF	C_EB	11	pF