General Purpose NPN Switching Transistor PANJIT MMBT3904 with 40V Collector Emitter Voltage and 200mA Current

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Product Description

MMBT3904 NPN General Purpose Switching Transistor

The MMBT3904 is an NPN epitaxial silicon planar transistor designed for general-purpose switching applications. It offers a collector-emitter voltage of 40V and a collector current of 200mA, with a transition frequency exceeding 300MHz. This device is lead-free and complies with EU RoHS 2.0 standards.

Product Attributes

Brand: Panjit International Inc.
Material: Silicon
Color: Green molding compound (as per IEC 61249 standard)
Certifications: EU RoHS 2.0

Technical Specifications

Parameter	Condition	Min.	Typ.	Max.	Unit
Collector-Emitter Voltage (VCEO)			40		V
Collector-Base Voltage (VCBO)			60		V
Emitter-Base Voltage (VEBO)			0.6		V
Collector Current (IC)	Continuous		200		mA
Maximum Power Dissipation (PTOT)	Note 1 (Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.)		225		mW
Junction Temperature (TJ)		-55		150	°C
Storage Temperature (TSTG)		-55		150	°C
Collector-Emitter Breakdown Voltage (V(BR)CEO)	IC = 10mA, IB = 0	40			V
Collector-Base Breakdown Voltage (V(BR)CBO)	IC = 10uA, IE = 0	60			V
Emitter-Base Breakdown Voltage (V(BR)EBO)	IE = 10uA, IC = 0	0.6			V
Collector Cut-off Current (ICEX)	VCE = 30V, VBE = 0.3V			50	nA
Base Cut-off Current (IBL)	VCE = 30V, VBE = 0.3V			50	nA
DC Current Gain (hFE)	VCE = 1V, IC = 1mA	100		300
DC Current Gain (hFE)	VCE = 1V, IC = 10mA	70
DC Current Gain (hFE)	VCE = 1V, IC = 100mA	30
Collector-Emitter Saturation Voltage (VCE(SAT))	IC = 10mA, IB = 1mA		0.2	0.3	V
Collector-Emitter Saturation Voltage (VCE(SAT))	IC = 50mA, IB = 5mA		0.3	0.4	V
Base-Emitter Saturation Voltage (VBE(SAT))	IC = 10mA, IB = 1mA		0.65	0.75	V
Base-Emitter Saturation Voltage (VBE(SAT))	IC = 50mA, IB = 5mA		0.7	0.85	V
Collector-Emitter Capacitance (Cobo)	IC = 10mA, VBC = 5V, f = 1MHz		4.0		pF
Collector-Base Capacitance (Cobo)	VCB = 10V, f = 1MHz		4.0		pF
Emitter-Base Capacitance (Cebo)	VEB = 5V, f = 1MHz		0.8		pF
Rise Time (tr)	VCC = 3V, IC = 10mA, IB1 = 1mA, IB2 = -1mA		35		ns
Fall Time (tf)	VCC = 3V, IC = 10mA, IB1 = 1mA, IB2 = -1mA		50		ns
Storage Time (ts)	VCC = 3V, IC = 10mA, IB1 = 1mA, IB2 = -1mA		200		ns
Transition Frequency (fT)	IC = 10mA, VCE = 20V, f = 100MHz	300			MHz