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20V P Channel Enhancement Mode MOSFET PANJIT PJA3419 with ESD Protection and Green Molding Compound

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The PJA3419 is a 20V P-Channel Enhancement Mode MOSFET featuring ESD protection. It is designed for switch load and PWM applications, offering low RDS(ON) at various gate-source voltages and drain currents. The device utilizes Advanced Trench Process Technology and is compliant with EU RoHS 2011/65/EU and IEC61249 green molding compound standards.

Product Attributes

  • Brand: Panjit International Inc.
  • Certifications: EU RoHS 2011/65/EU, IEC61249 (Halogen Free), ESD Protected 2KV HBM
  • Material: Green molding compound
  • Color: Not specified
  • Origin: Not specified

Technical Specifications

ParameterSymbolTest ConditionMin.Typ.Max.Units
Maximum Ratings and Thermal Characteristics (TA=25 o C unless otherwise noted)
Drain-Source VoltageVDS-20V
Gate-Source VoltageVGS+12V
Continuous Drain CurrentID-4.0A
Pulsed Drain Current (Note 4)IDM-16A
Power DissipationPDTa=25oC1.25W
Derate above 25oC10mW/ oC
Operating Junction and Storage Temperature RangeTJ,TSTG-55150oC
Typical Thermal resistance - Junction to Ambient (Note 3)RJA100oC/W
Electrical Characteristics (TA=25 o C unless otherwise noted)
Static Drain-Source Breakdown VoltageBVDSSVGS=0V, ID=-250uA-20V
Gate Threshold VoltageVGS(th)VDS=VGS, ID=-250uA-0.5-1.2V
Drain-Source On-State ResistanceRDS(on)VGS=-10V, ID=-4.0A5060m
VGS=-4.5V, ID=-3.3A5870
VGS=-2.5V, ID=-2.0A8096
Zero Gate Voltage Drain CurrentIDSSVDS=-20V, VGS=0V-1uA
Gate-Source Leakage CurrentIGSSVGS=+8V, VDS=0V+10uA
Dynamic (Note 5)
Total Gate ChargeQgVDS=-10V, ID=-4.0A, VGS=-4.5V (Note 1,2)6.9nC
Gate-Source ChargeQgs1.5
Gate-Drain ChargeQg d1.9
CapacitanceCiss, Coss, CrssVDS=-10V, VGS=0V, f=1.0MHZ602pF
70
47
Switching Characteristics (Note 1,2)
Delay and Rise/Fall Timestd(on), tr, td(off), tfVDD=-10V, ID=-4.0A, VGS=-4.5V, RG=38.8ns
66
29
14
Drain-Source Diode
Maximum Continuous Drain-Source Diode Forward CurrentIS-1.5A
Diode Forward VoltageVSDIS=-1.0A, VGS=0V-0.79-1.0V

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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