PNP Silicon Transistor PANJIT MMBT5401 R1 00101 High Voltage SOT23 Plastic Case Lead Free Component

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Price: Negotiable

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Delivery Time: Negotiable

Product Description

MMBT5401 HIGH VOLTAGE TRANSISTOR PNP Silicon

The MMBT5401 is a high voltage PNP silicon transistor designed for various applications. It features a SOT-23 plastic case and is lead-free in compliance with EU RoHS 2.0 and uses green molding compound as per IEC 61249 standard.

Product Attributes

Case: SOT-23 plastic case
Terminals: Solderable per MIL-STD-750, Method 2026
Standard packaging: 8mm tape
Approx. Weight: 0.0003 ounces, 0.008 grams
Marking: M5A
Certifications: Lead free in compliance with EU RoHS 2.0, Green molding compound as per IEC 61249 standard

Technical Specifications

Symbol	Unit	Description	Value
MAXIMUM RATINGS
VCEO	V	Collector-Emitter Voltage	-50
VCBO	V	Collector-Base Voltage	-60
VEBO	V	Emitter-Base Voltage	-0.5
IC	A	Continuous Collector Current	-0.120
ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted)
V(BR)CEO	V	Collector-Emitter Breakdown Voltage (IC = -0.1mA, IB = 0)	-50
V(BR)CBO	V	Collector-Base Breakdown Voltage (IC = -0.1mA, IE = 0)	-60
V(BR)EBO	V	Emitter-Base Breakdown Voltage (IE = -0.1mA, IC = 0)	-0.5
ICBO	A	Collector Cut-off Current (VCE = -50V, IE = 0)	-50
ICBO	A	Collector Cut-off Current (VCE = -50V, IE = 0)	-50
hFE		DC Current Gain (IC = -10mA, VCE = -0.5V)	40-200
hFE		DC Current Gain (IC = -50mA, VCE = -0.5V)	25-100
VCE(SAT)	V	Collector-Emitter Saturation Voltage (IC = -10mA, IB = -1mA)	-0.20
VCE(SAT)	V	Collector-Emitter Saturation Voltage (IC = -50mA, IB = -5mA)	-0.30
VBE(SAT)	V	Base-Emitter Saturation Voltage (IC = -10mA, IB = -1mA)	-0.75
VBE(SAT)	V	Base-Emitter Saturation Voltage (IC = -50mA, IB = -5mA)	-0.95
fT	MHz	Current Gain Bandwidth Product (IC = -10mA, VCE = -10V)	100
Cob	pF	Output Capacitance (VCE = -10V, IE = 0, f = 1MHz)	6.0
hfe		Small Signal Current Gain (IC = -10mA, VCE = -10V, f = 100MHz)	4
Rs		Series Resistance (IC = -10mA, VCE = -0.5V, f = 1MHz)	0.8
THERMAL CHARACTERISTICS
PD	W	Power Dissipation (TA = 25C)	0.28
RJA	C/W	Thermal Resistance Junction to Ambient	165
PD	W	Power Dissipation (TA = 25C)	2.4
RJA	C/W	Thermal Resistance Junction to Ambient	71
TJ, TSTG	C	Operating Junction and Storage Temperature Range	-55 to +150