N channel MOSFET PIELENST AO3401-L optimized for switching in handheld and battery powered devices

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Product Description

Product Overview

The AO3401-L is a high-performance N-channel enhancement mode MOSFET designed for efficient switching applications. It features fast switching speeds, low on-resistance, and suitability for low gate drive voltages, making it ideal for notebook power management, battery protection, and handheld instruments.

Product Attributes

Brand: Not specified
Origin: Not specified
Material: Not specified
Color: Not specified
Certifications: Green Device Available

Technical Specifications

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings
VDS	Drain-Source Voltage				-30	V
VGS	Gate-Source Voltage				±12	V
ID	Drain Current – Continuous (TA=25)				-4.0	A
ID	Drain Current – Continuous (TA=70)				-3.0	A
IDM	Drain Current – Pulsed¹				-15.4	A
PD	Power Dissipation (TA=25)				1.56	W
	Power Dissipation – Derate above 25				0.012	W/
TSTG	Storage Temperature Range		-55		150
TJ	Operating Junction Temperature Range		-55		150
Electrical Characteristics
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=-250uA	-30			V
ΔBVDSS/ΔTJ	BVDSS Temperature Coefficient	Reference to 25, ID=-1mA		-0.03		V/
IDSS	Drain-Source Leakage Current	VDS=-30V , VGS=0V , TJ=25			-1	uA
IDSS	Drain-Source Leakage Current	VDS=-24V , VGS=0V , TJ=125			-10	uA
IGSS	Gate-Source Leakage Current	VGS= ±12V , VDS=0V			±100	nA
IS	Continuous Source Current	VG=VD=0V , Force Current			-4.0	A
ISM	Pulsed Source Current				-8.0	A
VSD	Diode Forward Voltage	VGS=0V , IS=-1A , TJ=25			-1.5	V
RDS(ON)	Static Drain-Source On-Resistance	VGS=-10V , ID=-4A		51	65	mΩ
RDS(ON)	Static Drain-Source On-Resistance	VGS=-4.5V , ID=-3A		65	80	mΩ
RDS(ON)	Static Drain-Source On-Resistance	VGS=-2.5V , ID=-2A		85	100	mΩ
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =-250uA	-0.4	-0.9	-1.3	V
ΔVGS(th)	VGS(th) Temperature Coefficient			3		mV/
gfs	Forward Transconductance	VDS=-10V , ID=-3A		5.4		S
Qg	Total Gate Charge^2,3	VDS=-15V , VGS=-4.5V , ID=-4A		8		nC
Qgs	Gate-Source Charge^2,3			1.9		nC
Qgd	Gate-Drain Charge^2,3			1.4		nC
Td(on)	Turn-On Delay Time^2,3	VDD=-15V , VGS=-10V , RG=6 ID=-1A		5.4		ns
Tr	Rise Time^2,3			19.4		ns
Td(off)	Turn-Off Delay Time^2,3			45.9		ns
Tf	Fall Time^2,3			12.4		ns
Ciss	Input Capacitance	VDS=-15V , VGS=0V , F=1MHz		810		pF
Coss	Output Capacitance			85		pF
Crss	Reverse Transfer Capacitance			50		pF