High voltage transistor with SOT23 package PANJIT MMBT5401 R1 00001 PNP silicon transistor lead free

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Price: Negotiable

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Delivery Time: Negotiable

Product Description

MMBT5401 High Voltage Transistor PNP Silicon

The MMBT5401 is a high voltage PNP silicon transistor designed for general-purpose applications. It features a SOT-23 plastic package and is lead-free in compliance with EU RoHS 2.0, utilizing a green molding compound as per IEC 61249 standard.

Product Attributes

Case: SOT-23 plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Standard packaging: 8mm tape
Approx. Weight: 0.0003 ounces, 0.008 grams
Marking: M5A
Lead free: In compliance with EU RoHS 2.0
Green molding compound: As per IEC 61249 standard

Technical Specifications

Symbol	Unit	Description	Min	Max
VCEO	V	Collector-Emitter Voltage	-150
VCBO	V	Collector-Base Voltage	-160
VEBO	V	Emitter-Base Voltage	-5.0
IC	A	Continuous Collector Current	-0.6
PD	W	Total Power Dissipation (TA=25C)		1.28
RJA	C/W	Thermal Resistance Junction to Ambient		65
PD	W	Total Power Dissipation (TA=25C, Alumina substrate)		2.34
RJA	C/W	Thermal Resistance Junction to Ambient (Alumina substrate)		71
TJ, TSTG	C	Operating Junction and Storage Temperature	-55	+150
V(BR)CEO	V	Collector-Emitter Breakdown Voltage (IC = -0.1 mA)	-150
V(BR)CBO	V	Collector-Base Breakdown Voltage (IE = -0.1 mA)	-160
V(BR)EBO	V	Emitter-Base Breakdown Voltage (IE = -0.1 mA)	-5.0
ICBO	A	Collector Cut-off Current (VCE = -120 V)		-50
hFE		DC Current Gain (IC = -10 mA, VCE = -0.5 V)	40
hFE		DC Current Gain (IC = -100 mA, VCE = -0.5 V)	20
VCE(SAT)	V	Collector-Emitter Saturation Voltage (IC = -10 mA, IB = -0.1 mA)		-0.20
VCE(SAT)	V	Collector-Emitter Saturation Voltage (IC = -100 mA, IB = -0.5 mA)		-0.50
VBE(SAT)	V	Base-Emitter Saturation Voltage (IC = -10 mA, IB = -0.1 mA)		-0.15
VBE(SAT)	V	Base-Emitter Saturation Voltage (IC = -100 mA, IB = -0.5 mA)		-0.25
fT	MHz	Transition Frequency (IC = -10 mA, VCE = -10 V)	100
Cob	pF	Output Capacitance (VCE = -10 V, IE = 0, f = 1 MHz)		6.0
hFE		Small Signal Current Gain (IC = -10 mA, VCE = -10 V, f = 100 MHz)	4
FN		Noise Figure (IC = -0.1 mA, VCE = -5 V, RS = 0.1 k, f = 1 kHz)		0.8