Schottky Barrier Diode PJSEMI RB551V-30 Suitable for High Current and Low Voltage Drop Applications
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Delivery Time:
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Product Description
Product Overview
The RB551V-30 is a Schottky Barrier Diode from Pingjingsemi, designed for high current capability and low power loss. It features a low forward voltage drop and guarding for overvoltage protection, making it suitable for applications requiring high efficiency. The metal silicon junction ensures majority carrier conduction.
Product Attributes
- Brand: Pingjingsemi
- Model: RB551V-30
- Package Type: SOD-323
- Marking Code: D
Technical Specifications
| Parameter | Symbol | RB551V-30 | Units |
| Maximum Repetitive Peak Reverse Voltage | VRRM | 30 | V |
| DC Reverse Voltage | VR | 30 | V |
| Maximum Average Forward Current at TA=25C | IO | 0.5 | A |
| Power Dissipation | PD | 200 | mW |
| Reverse Leakage Current at VR=20V | IR | 100 | uA |
| Peak Forward Surge Current 8.3 ms Single Half Sine Wave | IFSM | 25 | A |
| Maximum Forward Voltage at IF=100 mA | VF | 0.36 | V |
| Maximum Forward Voltage at IF=500 mA | VF | 0.47 | V |
| Junction Temperature Range | TJ | -55 to +125 | C |
| Storage Temperature Range | TSTG | -55 to +125 | C |
Package Outline
SOD-323
| Symbol | mm | mil | ||
| min | max | min | max | |
| A | 1.1 | 1.4 | 43 | 55 |
| A1 | 0.08 | 0.2 | 3.1 | 7.9 |
| b | 0.25 | 0.45 | 9.8 | 17.7 |
| C | 0.15 | 0.35 | 5.9 | 13.8 |
| D | 2.55 | 2.75 | 100 | 108 |
| E | 1.8 | 2.1 | 71 | 83 |
| E1 | 1.2 | 1.4 | 47 | 55 |
| L1 | 0.3 | 0.6 | 12 | 24 |
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