NPN Transistor SOT23 Package Switching Amplifier Applications Featuring PJSEMI MMBT5551 High Voltage

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Product Description

Product Overview

The MMBT5551 is an NPN transistor in a SOT-23 package designed for switching and AF amplifier applications. It offers robust performance with high breakdown voltages and controlled current gain.

Product Attributes

Brand: Pingjingsemi (implied by URL)
Origin: China (implied by URL and revision date format)
Package Type: SOT-23
Marking Code: G1

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Collector Base Voltage	VCBO	180	V
Collector Emitter Voltage	VCEO	160	V
Emitter Base Voltage	VEBO	6	V
Collector Current	IC	600	mA
Maximum Power Dissipation	PD	350	mW
Junction Temperature	TJ	150
Storage Temperature Range	TSTG	-55 to +150
DC Current Gain	HFE	80	--	VCE = 5 V, IC = 1 mA
DC Current Gain	HFE	80-250	--	VCE = 5 V, IC = 10 mA
DC Current Gain	HFE	30	--	VCE = 5 V, IC = 50 mA
Collector Base Cutoff Current	ICBO	50	nA	VCB = 120V
Emitter Base Cutoff Current	IEBO	50	nA	VEB = 4 V
Collector Base Breakdown Voltage	V(BR)CBO	180	V	IC = 100 A
Collector Emitter Breakdown Voltage	V(BR)CEO	160	V	IC = 1 mA
Emitter Base Breakdown Voltage	V(BR)EBO	6	V	IE = 10 A
Collector Emitter Saturation Voltage	VCE(sat)	0.15	V	IC = 10 mA, IB = 1 mA
Collector Emitter Saturation Voltage	VCE(sat)	0.2	V	IC = 50 mA, IB = 5 mA
Base Emitter Saturation Voltage	VBE(sat)	1	V	IC = 10 mA, IB = 1 mA
Base Emitter Saturation Voltage	VBE(sat)	1	V	IC = 50 mA, IB = 5 mA
Transition Frequency	FT	100-300	MHz	VCE = 10 V, IC = 10 mA, f = 100 MHz
Output Capacitance	Cob	6	pF	VCB = 10 V, f = 1 MHz