Lead free silicon diode PJSEMI BAV21WS with fast reverse recovery and low profile surface mount package

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The BAV19WS~BAV21WS is a series of silicon epitaxial planar switching diodes designed for surface mount applications. These diodes feature a glass passivated chip junction, a low profile package, and fast reverse recovery time. They are lead-free and comply with the EU RoHS 2011/65/EU directive, making them suitable for environmentally conscious designs.

Product Attributes

Brand: Pingjingsemi
Material: Silicon Epitaxial Planar
Certifications: EU RoHS 2011/65/EU compliant

Technical Specifications

Parameter	Symbol	BAV19WS	BAV20WS	BAV21WS	Unit
Maximum Repetitive Peak Reverse Voltage	VRRM	120	200	250	V
Maximum RMS Voltage	VRMS	100	150	200	V
Continuous Forward Current	IF	250			mA
Repetitive Peak Forward Current	IFRM	625			mA
Non-repetitive Peak Forward Surge Current (t=1s)	IFSM	1			A
Non-repetitive Peak Forward Surge Current (t=1ms)	IFSM	3			A
Non-repetitive Peak Forward Surge Current (t=1s)	IFSM	9			A
Power Dissipation	PD	500			mW
Junction Temperature	TJ	150			C
Storage Temperature Range	TSTG	-55 to +150			C
Reverse Breakdown Voltage (IR=100A)	V(BR)R	120	200	250	V
Maximum Forward Voltage (IF=100mA)	VF	1.0			V
Maximum Forward Voltage (IF=200mA)	VF	1.25			V
Maximum DC Reverse Current (TA=25C)	IR	0.1			A
Maximum DC Reverse Current (TA=150C)	IR	100			A
Typical Junction Capacitance (VR=4V, f=1MHz)	Cj	5			pF
Maximum Reverse Recovery Time (IF=0.5A, Irr=0.25A, IR=1A)	Trr	50			nS