P Channel Enhancement Mode MOSFET PJSEMI PJM10H01PSA suitable for PWM and power management circuits
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The PJM10H01PSA is a P-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features fast switching, low gate charge, and low RDS(on), making it suitable for applications such as PWM, load switching, and power management. The device is housed in a SOT-23 package.
Product Attributes
- Brand: PingJingSemi
- Package Type: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | -ID | 1 | A | |||
| Drain Current-Pulsed | -IDM | Note1 | 1.5 | A | ||
| Maximum Power Dissipation | PD | 0.5 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Thermal Resistance,Junction-to-Ambient | RθJA | Note2 | 250 | °/W | ||
| Electrical Characteristics (Ta=25°C unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250µA | 100 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-80V,VGS=0V | -- | -- | 100 | nA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | -VGS(th) | Note3, VDS=VGS,ID=-250µA | 1 | -- | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=-10V,ID=-1A | -- | -- | 650 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=-6V,ID=-0.5A | -- | -- | 700 | mΩ |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=-50V, ID=-1A, VGEN=-10V,RL=33Ω,RG=6Ω | -- | 7 | 11 | nS |
| Turn-on Rise Time | tr | -- | 11 | 17 | nS | |
| Turn-off Delay Time | td(off) | -- | 9 | 15 | nS | |
| Turn-off Fall Time | tf | -- | 10 | 15 | nS | |
| Total Gate Charge | Qg | VDD=-50V,ID=-1A, VGS=-10V | -- | 3.3 | 4 | nC |
| Gate-Source Charge | Qgs | -- | 0.47 | -- | nC | |
| Gate-Drain Charge | Qg d | -- | 1.45 | -- | nC | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | -VSD | Note3, VGS=0V,IS=-0.5A | -- | -- | 1.3 | V |
| Diode Forward Current | -IS | Note2 | -- | -- | 1 | A |
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Hefei Purple Horn E-Commerce Co., Ltd.
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Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
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Sellina