Power MOSFET PJSEMI PJM01N20KDC N Channel with 20V Drain Source Voltage and ESD Protection up to 2KV
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Product Description
Product Overview
The PJM01N20KDC is an N-Channel Enhancement Mode Power MOSFET from Pingjingsemi. It features low gate charge and RDS(ON), ESD protection up to 2KV, and is designed for applications such as load switches and PWM applications, as well as general power management. With a VDS of 20V and ID of 0.8A, it offers RDS(on)
Product Attributes
- Brand: Pingjingsemi
- Model: PJM01N20KDC
- Package: DFN1x0.6-3L
- Marking Code: JN
- Certifications: ESD protected (HBM) up to 2KV
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Drain Current-Continuous | ID | 0.8 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 3.2 | A | ||
| Maximum Power Dissipation | PD | 0.35 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | to | +150 | °C | |
| Thermal Resistance,Junction-to-Ambient | RθJA | Note2 | 357 | °°C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250μA | 20 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±10V,VDS=0V | -- | -- | ±10 | μA |
| Gate Threshold Voltage | VGS(th) | Note3,VDS=VGS,ID=250μA | 0.35 | 0.75 | 1.1 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=4.5V,ID=0.6A | -- | 180 | 300 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=2.5V,ID=0.5A | -- | 260 | 350 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=1.8V,ID=0.2A | -- | 415 | 700 | mΩ |
| Forward Transconductance | gFS | Note3,VDS=5V,ID=0.5A | -- | 2 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=10V,VGS=0V,f=1MHz | -- | 56 | -- | pF |
| Output Capacitance | Coss | -- | 20 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 2.5 | -- | pF | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=10V, ID=0.5A, VGS=4.5V,RG=10Ω | -- | 2 | -- | nS |
| Turn-on Rise Time | tr | -- | 18.8 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 10 | -- | nS | |
| Turn-off Fall Time | tf | -- | 23 | -- | nS | |
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=10V,ID=0.5A, VGS=4.5V | -- | 1 | -- | nC |
| Gate-Source Charge | Qgs | -- | 0.28 | -- | nC | |
| Gate-Drain Charge | Qg d | -- | 0.22 | -- | nC | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3,VGS=0V,IS=0.8A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | Note2 | -- | -- | 0.8 | A |
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