Power MOSFET PJSEMI PJM15N30DF Featuring 30V VDS and 15A Drain Current for Load Switch Applications
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Product Description
Product Overview
The PJM15N30DF is an N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It is RoHS and Reach compliant, halogen and antimony free, and has a Moisture Sensitivity Level 1. This MOSFET is designed for load switch, PWM applications, and power management, offering a VDS of 30V and an ID of 15A with low RDS(on) values.
Product Attributes
- Brand: PingJingSemi
- Certifications: RoHS, Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 1
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1 | 1.6 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=10V,ID=11A | -- | 7.5 | 12 | m |
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V,ID=10A | -- | 12 | 16 | m |
| Forward Transconductance | gFS | VDS=5V,ID=1A | -- | 6 | -- | S |
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHz | -- | 1290 | -- | pF |
| Output Capacitance | Coss | VDS=15V,VGS=0V,f=1MHz | -- | 166 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS=0V,f=1MHz | -- | 135 | -- | pF |
| Total Gate Charge | Qg | VDS=15V,ID=10A, VGS=10V | -- | 19 | -- | nC |
| Gate-Source Charge | Qgs | VDS=15V,ID=10A, VGS=10V | -- | 6.3 | -- | nC |
| Gate-Drain Charge | Qg | VDS=15V,ID=10A, VGS=10V | -- | 4.5 | -- | nC |
| Turn-on Delay Time | td(on) | VDD=15V, ID=10A, VGS=10V, RGEN=3 | -- | 6 | -- | nS |
| Turn-on Rise Time | tr | VDD=15V, ID=10A, VGS=10V, RGEN=3 | -- | 5 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=15V, ID=10A, VGS=10V, RGEN=3 | -- | 25 | -- | nS |
| Turn-off Fall Time | tf | VDD=15V, ID=10A, VGS=10V, RGEN=3 | -- | 7 | -- | nS |
| Diode Forward Voltage | VSD | VGS=0V,IS=15A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | VGS=0V,IS=15A | -- | -- | 15 | A |
| Gate Resistance | Rg | VDS=-0V,VGS=0V,f=1MHz | -- | 1.65 | -- |
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