power management device PJSEMI PJM65H0D5NSA N Channel Enhancement Mode Power MOSFET for electronics
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Product Description
Product Overview
The PJM65H0D5NSA is an N-Channel Enhancement Mode Power MOSFET designed for power switch circuits in adaptors and chargers, and general power management applications. It features fast switching, low gate charge, low RDS(on), and low reverse transfer capacitances, making it an efficient component for various power electronics designs.
Product Attributes
- Brand: PingJingSemi
- Model: PJM65H0D5NSA
- Package: SOT-23
- Origin: China (implied by website domain)
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 650 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 50 | mA | |||
| Drain Current-Pulsed | IDM | Note1 | 200 | mA | ||
| Maximum Power Dissipation | PD | 1.39 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Thermal Resistance,Junction-to-Ambient | RθJA | Note2 | 200 | °°C/W | ||
| Maximum Junction-to-Case | RθJC | Note2 | 90 | °°C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250µA | 650 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=650V,VGS=0V | 1 | µA | ||
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | Note3, VDS=VGS,ID=250µA | 0.6 | 2.5 | V | |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=10V,ID=25mA | 140 | 175 | Ω | |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=4.5V,ID=20mA | 150 | 185 | Ω | |
| Forward Transconductance | gFS | Note3, VDS=15V,ID=20mA | 0.13 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V,VGS=0V,f=1MHz | 8.8 | pF | ||
| Output Capacitance | Coss | 1.5 | pF | |||
| Reverse Transfer Capacitance | Crss | 0.6 | pF | |||
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=350V, ID=20mA, VGS=10V,RGEN=25Ω | 3.5 | nS | ||
| Turn-on Rise Time | tr | 4.0 | nS | |||
| Turn-off Delay Time | td(off) | 10 | nS | |||
| Turn-off Fall Time | tf | 15 | nS | |||
| Total Gate Charge | Qg | VDS=350V,ID=20mA, VGS=10V | 0.8 | nC | ||
| Gate-Source Charge | Qgs | 0.09 | nC | |||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3, VGS=0V,IS=50mA | 1.5 | V | ||
| Diode Forward Current | IS | Note2 | 50 | mA | ||
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Hefei Purple Horn E-Commerce Co., Ltd.
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Contact Person
Sellina