High Reliability Power MOSFET PJSEMI PJM15N60DF with Compact DFN2x2 6L Package and 15A Drain Current
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Product Description
Product Overview
The PJM15N60DF is an N-Channel Enhancement Mode Power MOSFET designed for efficient power switching. It features low gate charge and low on-resistance (RDS(ON)), making it suitable for applications like load switching and PWM control. With a VDS of 60V and ID of 15A, it offers a compact DFN2x2-6L package.
Product Attributes
- Brand: PingJingSemi
- Revision: 0.0
- Date: Dec-2021
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 15 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 60 | A | ||
| Maximum Power Dissipation | PD | 5 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Maximum Junction-to-Case | RθJC | Note2 | 25 | °C/W | ||
| Electrical Characteristics (TJ=25°C unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250μA | 60 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | Note3, VDS=VGS,ID=250μA | 1.0 | -- | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=10V,ID=10A | -- | -- | 33 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=4.5V,ID=5A | -- | -- | 45 | mΩ |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V,VGS=0V,f=1MHz | -- | 1148 | -- | pF |
| Output Capacitance | Coss | VDS=25V,VGS=0V,f=1MHz | -- | 58.5 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V,f=1MHz | -- | 49.4 | -- | pF |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDS=30V, ID=20A, VGS=10V,RGEN=1.8Ω | -- | 7.6 | -- | nS |
| Turn-on Rise Time | tr | VDS=30V, ID=20A, VGS=10V,RGEN=1.8Ω | -- | 20 | -- | nS |
| Turn-off Delay Time | td(off) | VDS=30V, ID=20A, VGS=10V,RGEN=1.8Ω | -- | 15 | -- | nS |
| Turn-off Fall Time | tf | VDS=30V, ID=20A, VGS=10V,RGEN=1.8Ω | -- | 24 | -- | nS |
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=30V,ID=10A, VGS=10V | -- | 20.3 | -- | nC |
| Gate-Source Charge | Qgs | VDS=30V,ID=10A, VGS=10V | -- | 3.7 | -- | nC |
| Gate-Drain Charge | Qg d | VDS=30V,ID=10A, VGS=10V | -- | 5.3 | -- | nC |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3, VGS=0V,IS=15A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | Note2 | -- | -- | 15 | A |
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