Low gate charge 650V N channel MOSFET PIP PTA05N65 ideal for SMPS standby power adaptors and charger applications
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Product Description
Product Overview
The PTA05N65 is a 650V N-channel Planar MOSFET designed for various power applications. It offers low gate charge for minimized switching loss and a fast recovery body diode. Key features include RoHS compliance and a typical RDS(ON) of 1.85 at VGS=10V. This device is suitable for adaptors, chargers, and SMPS standby power applications.
Product Attributes
- Brand: Perfect Intelligent Power Semiconductor Co., Ltd (PIP)
- Model: PTA05N65
- Package: TO-220F
- Certifications: RoHS Compliant
- Origin: China (implied by copyright notice)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Voltage | VDSS | 650 | V | TC=25 unless otherwise specified | ||
| Gate-to-Source Voltage | VGSS | ±30 | V | |||
| Continuous Drain Current | ID | 5.0 | A | TC=25 unless otherwise specified | ||
| Pulsed Drain Current | IDM | 20 | A | VGS=10V, TC=25 unless otherwise specified | ||
| Single Pulse Avalanche Energy | EAS | 274 | mJ | |||
| Power Dissipation | PD | 36 | W | TC=25 unless otherwise specified | ||
| Derating Factor above 25 | 0.28 | W/ | ||||
| Soldering Temperature | TL | 300 | Distance of 1.6mm from case for 10 seconds | |||
| Operating and Storage Temperature Range | TJ&TSTG | -55 | 150 | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 3.55 | /W | |||
| Thermal Resistance, Junction-to-Ambient | RJA | 100 | /W | |||
| OFF Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID=250µA | ||
| Drain-to-Source Leakage Current | IDSS | 1 | µA | VDS=650V, VGS=0V | ||
| 100 | µA | VDS=520V, VGS=0V, TJ =125 | ||||
| Gate-to-Source Leakage Current | IGSS | +100 | nA | VGS=+30V, VDS=0V | ||
| -100 | nA | VGS=-30V, VDS=0V | ||||
| ON Characteristics | ||||||
| Static Drain-to-Source On-Resistance | RDS(ON) | 1.85 | 2.5 | Ω | VGS=10V, ID=2.5A | |
| Gate Threshold Voltage | VGS(TH) | 2.0 | 4.0 | V | VDS=VGS, ID=250µA | |
| Forward Transconductance | gfs | 6.0 | S | VDS=15V,ID=2.5A | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | 650 | pF | VGS=0V, VDS=25V, f=1.0MHz | ||
| Reverse Transfer Capacitance | Crss | 8 | pF | VGS=0V, VDS=25V, f=1.0MHz | ||
| Output Capacitance | Coss | 48 | pF | VGS=0V, VDS=25V, f=1.0MHz | ||
| Total Gate Charge | Qg | 17 | nC | VDD=325V, ID=5A, VGS=0 to 10V | ||
| Gate-to-Source Charge | Qgs | 2.4 | nC | VDD=325V, ID=5A, VGS=0 to 10V | ||
| Gate-to-Drain (Miller) Charge | Qgd | 10.4 | nC | VDD=325V, ID=5A, VGS=0 to 10V | ||
| Resistive Switching Characteristics | ||||||
| Turn-on Delay Time | td(ON) | 10 | nS | VDD=325V, ID=5A, VGS=10V, Rg=25Ω | ||
| Rise Time | trise | 25 | nS | VDD=325V, ID=5A, VGS=10V, Rg=25Ω | ||
| Turn-Off Delay Time | td(OFF) | 20 | nS | VDD=325V, ID=5A, VGS=10V, Rg=25Ω | ||
| Fall Time | tfall | 25 | nS | VDD=325V, ID=5A, VGS=10V, Rg=25Ω | ||
| Source-Drain Body Diode Characteristics | ||||||
| Continuous Source Current | ISD | 5.0 | A | Integral pn-diode in MOSFET, Pulse width≤380µs; duty cycle≤2% | ||
| Pulsed Source Current | ISM | 20 | A | Pulse width≤380µs; duty cycle≤2% | ||
| Diode Forward Voltage | VSD | 1.4 | V | ISD=5A, VGS=0V | ||
| Reverse Recovery Time | trr | 300 | ns | VGS=0V, IF= ISD, di/dt=100A/µs | ||
| Reverse Recovery Charge | Qrr | 2.2 | µC | VGS=0V, IF= ISD, di/dt=100A/µs | ||
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