Low Voltage Rectifier PJSEMI 1N5819WS Schottky Barrier Metal Silicon Junction with Surge Protection
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The 1N5817WS-1N5819WS series are Schottky barrier rectifiers featuring a metal silicon junction for majority carrier conduction. They offer low power loss, high efficiency, and high current capability with a low forward voltage drop and high surge capability. These rectifiers are designed for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. They include guarding for overvoltage protection.
Product Attributes
- Brand: pingjingsemi
- Material: Metal silicon junction
- Package: SOD-323
Technical Specifications
| Parameter | Symbols | 1N5817WS | 1N5818WS | 1N5819WS | Units |
| Maximum Repetitive Peak Reverse Voltage | VRRM | 20 | 30 | 40 | V |
| Maximum RMS voltage | VRMS | 14 | 21 | 28 | V |
| Maximum DC Blocking Voltage | VDC | 20 | 30 | 40 | V |
| Maximum Average Forward Rectified Current | IF(AV) | 1 | A | ||
| Peak Forward Surge Current, 8.3ms Single Half Sine-wave Superimposed On Rated Load (JEDEC) | IFSM | 9 | A | ||
| Maximum Instantaneous Forward Voltage at 1 A | VF | 0.45 | 0.55 | 0.6 | V |
| Maximum Instantaneous Forward Voltage at 3 A | VF | 0.75 | 0.875 | 0.9 | V |
| Maximum Instantaneous Reverse Current at TA = 25C Rated DC Reverse Voltage | IR | 1 | mA | ||
| Maximum Instantaneous Reverse Current at TA = 100C Rated DC Reverse Voltage | IR | 10 | mA | ||
| Typical Junction Capacitance | CJ | 110 | pF | ||
| Storage and Operating Junction Temperature Range | TJ, Tstg | -55 ~ +150 | C | ||
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina