switching diode PJSEMI MMBN187SE featuring compact SOT23 5 package for electronic circuit integration

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Product Description

Product Overview

The MMBN187SE is a high-speed switching silicon epitaxial planar switching diode designed for efficient switching applications. Its compact SOT-23-5 package makes it suitable for various electronic circuits.

Product Attributes

Brand: www.pingjingsemi.com
Marking Code: N187
Package: SOT-23-5

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Maximum Repetitive Reverse Voltage	VRRM	80	V
Reverse Voltage	VR	80	V
Average Rectified Forward Current	IF(AV)	100	mA
Non-Repetitive Peak Forward Surge Current	IFSM	1 / 4	A	at t = 1s / at t = 1s
Maximum Power Dissipation	PD	350	mW
Junction Temperature	TJ	150	C
Storage Temperature Range	TSTG	-55 to +150	C
Forward Voltage	VF	0.7 / 0.85	V	at IF = 5 mA / at IF = 10 mA
Reverse Breakdown Voltage	V(BR)R	80	V	at IR = 100 A
Reverse Current	IR	1	A	at VR = 80 V
Typical Junction Capacitance	Cj	3	pF	at VR = 0 V, f = 1 MHz
Maximum Reverse Recovery Time	Trr	4	nS	at IF = IR =10mA, Irr = 0.1IR