Power MOSFET PJSEMI PJM70N30DL N Channel Device Featuring 30V VDS and 70A Continuous Drain Current
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Product Description
Product Overview
The PJM70N30DL is an N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is 100% avalanche tested, RoHS compliant, and halogen and antimony free, making it suitable for applications requiring high reliability and environmental consciousness. This MOSFET is designed for load switching, battery protection, and uninterruptible power supply systems, offering a VDS of 30V and a continuous ID of 70A with low on-resistance.
Product Attributes
- Brand: PingJingSemi
- Certifications: RoHS Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | 70 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 240 | A | ||
| Maximum Power Dissipation | PD | 28 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Thermal Resistance, Junction-to-Case | RJC | 4.46 | C/W | |||
| Single Pulse Avalanche Energy | EAS | Note2 | 110 | mJ | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A, Note2 | 1 | 1.5 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=10V,ID=30A, Note3 | -- | -- | 5 | m |
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V,ID=20A, Note3 | -- | -- | 7 | m |
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHz | -- | 2400 | -- | pF |
| Output Capacitance | Coss | VDS=15V,VGS=0V,f=1MHz | -- | 263 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS=0V,f=1MHz | -- | 200 | -- | pF |
| Total Gate Charge | Qg | VDS=15V,ID=30A, VGS=10V | -- | 42 | -- | nC |
| Gate-Source Charge | Qgs | VDS=15V,ID=30A, VGS=10V | -- | 9 | -- | nC |
| Gate-Drain Charge | Qg | VDS=15V,ID=30A, VGS=10V | -- | 10 | -- | nC |
| Turn-on Delay Time | td(on) | VDD=15V, ID=30A, VGS=10V, RGEN=3 | -- | 9 | -- | nS |
| Turn-on Rise Time | tr | VDD=15V, ID=30A, VGS=10V, RGEN=3 | -- | 15 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=15V, ID=30A, VGS=10V, RGEN=3 | -- | 36 | -- | nS |
| Turn-off Fall Time | tf | VDD=15V, ID=30A, VGS=10V, RGEN=3 | -- | 11 | -- | nS |
| Diode Forward Voltage | VSD | VGS=0V,IS=30A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | -- | -- | 70 | A | |
| Forward Transconductance | gFS | VDS=5V,ID=2A, Note3 | -- | 8 | -- | S |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
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Contact Person
Sellina