Power Switching P Enhancement Field Effect Transistor Featuring PJSEMI PJM3401PSA Ultra Low RDS

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Product Description

Product Overview

The PJM3401PSA is a P-Enhancement Field Effect Transistor designed for power switching applications. It features a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, and an excellent package for good heat dissipation. This transistor is suitable for hard-switched and high-frequency circuits, as well as uninterruptible power supply systems.

Product Attributes

Brand: PingJingSemi
Package: SOT-23

Technical Specifications

Parameter	Symbol	Test Condition	Min.	Typ.	Max.	Units
Absolute Maximum Ratings
Drain-Source Voltage	-VDS				30	V
Gate-Source Voltage	VGS			±12		V
Continuous Drain Current	-ID				4.1	A
Power Dissipation	PD				1.2	W
Junction and Storage Temperature Range	TJ, TSTG		-55		150	°C
Thermal Characteristics
Maximum Junction-to-Ambient	RΡJA			104		°C/W
Electrical Characteristics (TA=25℃ unless otherwise specified)
Drain-source breakdown voltage	-V(BR)DSS	VGS = 0V, ID=-250µA	30			V
Drain to Source Leakage Current	-IDSS	VDS =-24V,VGS = 0V			1	µA
Gate-body leakage current	IGSS	VGS =±12V, VDS = 0V			±100	nA
Gate threshold voltage Note1	-VGS(th)	VDS =VGS, ID =-250µA	0.7		1.3	V
Drain-source on-resistance Note1	RDS(on)	VGS =-10V, ID =-4.1A		65		mΩ
Drain-source on-resistance Note1	RDS(on)	VGS =-4.5V, ID =-2A		85		mΩ
Forward transconductance Note1	gFS	VDS =-5V, ID =-5A		7		S
Dynamic Characteristics
Input Capacitance	Ciss	VDS = -15V,VGS = 0V,f=1MHz		954		pF
Output Capacitance	Coss			115		pF
Reverse Transfer Capacitance	Crss			77		pF
Switching Characteristics
Turn-on delay time	td(on)	VDD=-15V, VGS=-10VRGEN =6Ω, RL =3.6Ω		6.3		ns
Turn-on rise time	tr			3.2		ns
Turn-off delay time	td(off)			38.2		ns
Turn-off fall time	tf			12		ns
Source-Drain Diode characteristics
Diode Forward voltage	-VSD	VGS =0V, IS=-1A		1		V