P Channel MOSFET PJSEMI PJM2321PSA Featuring 20V Drain to Source Voltage and 2.9A Continuous Current

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The PJM2321PSA is a P-Channel Power MOSFET designed for load switching and PWM applications, offering efficient power management. It features a -20V Drain-to-Source Voltage and a continuous drain current of -2.9A, with a low on-resistance of 57m (max) at -4.5V.

Product Attributes

Brand: PingJingSemi
Package: SOT-23

Technical Specifications

Parameter	Symbol	Test Condition	Min	Type	Max	Units
Drain-source breakdown voltage	V(BR)DSS	VGS = 0V, ID=-250A	-20			V
Drain to Source Leakage Current	IDSS	VDS =-16V,VGS = 0V			-1	A
Gate-body leakage current	IGSS	VGS =12V, VDS = 0V			100	nA
Gate threshold voltage	VGS(th)	VDS =VGS, ID =-250A	-0.4	-0.9		V
Drain-source on-resistance	RDS(on)	VGS =-4.5V, ID =-3.3A			57	m
Drain-source on-resistance	RDS(on)	VGS =-2.5V, ID =-2.8A			76	m
Drain-source on-resistance	RDS(on)	VGS =-1.8V, ID =-2.3A			100	m
Forward tranconductance	gFS	VDS =-5V, ID =-3.3A		3		S
Input Capacitance	Ciss	VDS =-6V,VGS =0V,f=1MHz		715		pF
Output Capacitance	Coss	VDS =-6V,VGS =0V,f=1MHz		170		pF
Reverse Transfer Capacitance	Crss	VDS =-6V,VGS =0V,f=1MHz		120		pF
Turn-on delay time	td(on)	ID=-1AVDD=-6V, VGS=-4.5VRGEN =1, RL =6		25		ns
Turn-on rise time	tr	ID=-1AVDD=-6V, VGS=-4.5VRGEN =1, RL =6		55		ns
Turn-off delay time	td(off)	ID=-1AVDD=-6V, VGS=-4.5VRGEN =1, RL =6		90		ns
Turn-off fall time	tf	ID=-1AVDD=-6V, VGS=-4.5VRGEN =1, RL =6		60		ns
Total gate charge	Qg	VDD =-6V,VGS =-4.5V,ID =-4.3A		13		nC
Gate-source charge	Qgs	VDD =-6V,VGS =-4.5V,ID =-4.3A		1.2		nC
Gate-drain charge	Qg d	VDD =-6V,VGS =-4.5V,ID =-4.3A		1.6		nC
Diode Forward voltage	VSD	VGS =0V, IS=-1.6A		1.2		V