Silicon Carbide Schottky Diode REASUNOS RSS20120K with Temperature Independent Switching up to 175C
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Product Description
Product Overview
The Reasunos RSS20120K is a Silicon Carbide Schottky Diode designed for high-performance switching applications. It features zero reverse recovery current and zero forward recovery voltage, leading to reduced switching losses and enabling the replacement of bipolar devices with unipolar ones. Its positive temperature coefficient on VF and temperature-independent switching contribute to reliable operation, even at high temperatures up to 175C. This diode is ideal for applications requiring reduced heatsink size and parallel device operation without thermal runaway.
Product Attributes
- Brand: Reasunos
- Material: Silicon Carbide
- Origin: China (implied by company name and copyright)
Technical Specifications
| Part Number | VRRM (V) | IF (A) | QC (nC) | Package | Marking | Packing | Qty. |
| RSS20120K | 1200 | 36 (TC135) | 104 | TO-247-3 | RSS20120K | Tube | 30 PCS |
| Symbol | Parameter | Value | Unit | Test Conditions | Note |
| VRRM | Repetitive Peak Reverse Voltage | 1200 | V | TC = 25 | |
| VRSM | Surge Peak Reverse Voltage | 1200 | V | TC = 25 | |
| VR | DC Blocking Voltage | 1200 | V | TC = 25 | |
| IF | Forward Current | 36*2 / 18*2 / 10/2 | A | TC 25 / TC 135 / TC 159 | Fig. 3 |
| IFSM | Non-Repetitive Forward Surge Current | 60*2 / 45*2 | A | TC = 25, tp = 10ms, Half Sine Wave / TC = 110, tp = 10ms, Half Sine Wave | |
| IFRM | Repetitive Peak Forward Surge Current | 55*2 | A | TC = 25, tp = 10ms, Half Sine Wave | |
| Ptot | Power Dissipation | 204*2 | W | TC = 25 | Fig. 4 |
| TC | Maximum Case Temperature | 159 | |||
| TJ,TSTG | Operating Junction and Storage Temperature | -55 to 175 | |||
| VF | Forward Voltage | 1.43 (Typ.) / 1.7 (Max.) | V | IF = 10A, TJ = 25 / IF = 10A, TJ = 175 | Fig.1 |
| IR | Reverse Current | 2 (Typ.) / 60 (Max.) | A | VR = 1200V, TJ = 25 / VR = 1200V, TJ = 175 | Fig.2 |
| C | Total Capacitance | 110 (Typ.) / 78 (Typ.) | pF | VR = 1V, TJ = 25, f = 1MHz / VR = 800V, TJ = 25, f = 1MHz | Fig.5 |
| QC | Total Capacitive Charge | 52 | nC | VR =800V | Fig.6 |
| Ec | Capacitance Stored Energy | 15.8 | uJ | VR =800V | Fig.7 |
| RJC | Thermal Resistance from Junction to Case | 0.736 | /W | Fig.8 |
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