Power MOSFET PJSEMI PJM3415PSA Silicon P Channel with 20 Volt Drain Source Voltage and SOT 23 Package
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Product Description
Product Overview
The PJM3415PSA is a Silicon P-Channel Power MOSFET designed for load switching and PWM applications. It features low gate charge and RDS(on), along with ESD protection up to 2KV (HBM). This MOSFET is packaged in a SOT-23 (TO-236) package.
Product Attributes
- Brand: Pingjingsemi
- Material: Silicon
- Package: SOT-23
- ESD Protected: Yes (HBM up to 2KV)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Units |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±8 | V | |||
| Continuous Drain Current | -ID | 4 | A | |||
| Power Dissipation | PD | 1.5 | W | |||
| Junction and Storage Temperature Range | TJ, TSTG | -55 to 150 | 150 | °C | ||
| Thermal Characteristics | ||||||
| Maximum Junction-to-Ambient | RΘJA | 83 | °C/W | |||
| Electrical Characteristics | ||||||
| Drain-source breakdown voltage | -V(BR)DSS | VGS = 0V, ID =-250µA | 20 | V | ||
| Zero gate voltage drain current | -IDSS | VDS =-16V,VGS = 0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VGS =±8V, VDS = 0V | ±10 | µA | ||
| Gate threshold voltage | -VGS(th) | VDS =VGS, ID =-250µA | 0.3 | 0.65 | 1 | V |
| Drain-source on-resistance | RDS(on) | VGS =-4.5V, ID =-4A | 33 | 50 | mΩ | |
| Drain-source on-resistance | RDS(on) | VGS =-2.5V, ID =-4A | 45 | 60 | mΩ | |
| Drain-source on-resistance | RDS(on) | VGS =-1.8V, ID =-2A | 63 | 90 | mΩ | |
| Forward tranconductance | gFS | VDS =-5V, ID =-4A | 8 | S | ||
| Dynamic characteristics | ||||||
| Input Capacitance | Ciss | VDS =-10V,VGS =0V,f=1MHz | 1450 | pF | ||
| Output Capacitance | Coss | VDS =-10V,VGS =0V,f=1MHz | 205 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =-10V,VGS =0V,f=1MHz | 160 | pF | ||
| Switching Characteristics | ||||||
| Turn-on delay time | td(on) | VDS=-10V, VGS=-4.5V RGEN =3Ω, RL=2.5Ω | 9.5 | ns | ||
| Turn-on rise time | tr | VDS=-10V, VGS=-4.5V RGEN =3Ω, RL=2.5Ω | 17 | ns | ||
| Turn-off delay time | td(off) | VDS=-10V, VGS=-4.5V RGEN =3Ω, RL=2.5Ω | 94 | ns | ||
| Turn-off fall time | tf | VDS=-10V, VGS=-4.5V RGEN =3Ω, RL=2.5Ω | 35 | ns | ||
| Total gate charge | Qg | VDS =-10V,VGS =-4.5V,ID =-4A | 17.2 | nC | ||
| Gate-source charge | Qgs | VDS =-10V,VGS =-4.5V,ID =-4A | 1.3 | nC | ||
| Gate-drain charge | Qg | VDS =-10V,VGS =-4.5V,ID =-4A | 4.5 | nC | ||
| Source-Drain Diode characteristics | ||||||
| Diode Forward voltage | -VSD | VGS =0V, IS=-1A | 1 | V | ||
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