Gallium Nitride 650V FET RENESAS TP65H070G4PS with Low Output Capacitance and Reverse Recovery Charge
TP65H070G4PS 650V SuperGaN GaN FET
The TP65H070G4PS is a 650V, 72m Gallium Nitride (GaN) FET, designed as a normally-off device. It integrates advanced high-voltage GaN HEMT and low-voltage silicon MOSFET technologies for superior reliability and performance. Leveraging the Gen IV SuperGaN platform, it offers improved efficiency through lower gate charge, output capacitance, crossover loss, and reverse recovery charge, leading to increased power density, reduced system size and weight, and lower overall system cost. This device is easy to drive with commonly-used gate drivers and is suitable for applications in Datacom, Broad Industrial, PV Inverters, Servo Motors, Computing, and Consumer electronics.
Product Attributes
- Brand: Renesas Electronics
- Technology: Gen IV SuperGaN
- Material: Gallium Nitride (GaN)
- Certifications: JEDEC-qualified, RoHS compliant, Halogen-free packaging
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Drain to source voltage | VDSS | 650 | V | TJ = -55C to 150C |
| Transient drain to source voltage | VDSS(TR) | 800 | V | Spike duration < 30s, non-repetitive |
| Gate to source voltage | VGSS | 20 | V | |
| Maximum power dissipation | PD | 96 | W | TC=25C |
| Continuous drain current | ID | 29 | A | TC=25C (b) |
| Continuous drain current | ID | 18.4 | A | TC=100C (b) |
| Pulsed drain current | IDM | 120 | A | Pulse width: 10s |
| Operating temperature (Case) | TC | -55 to +150 | C | |
| Junction temperature | TJ | -55 to +150 | C | |
| Storage temperature | TS | -55 to +150 | C | |
| Soldering peak temperature | TSOLD | 260 | C | For 10 sec., 1.6mm from the case |
| Junction-to-case thermal resistance | RJC | 1 | C/W | Typical |
| Junction-to-ambient thermal resistance | RJA | 62 | C/W | Typical |
| Drain-source on-resistance | RDS(on)eff | 72 | m | VGS=10V, ID=18A,TJ=25C (typ) |
| Drain-source on-resistance | RDS(on)eff | 85 | m | VGS=10V, ID=18A,TJ=25C (max) |
| Drain-source on-resistance | RDS(on)eff | 148 | m | VGS=10V, ID=18A, TJ=150C (typ) |
| Drain-to-source leakage current | IDSS | 1.2 | A | VDS=650V, VGS=0V, TJ=25C (typ) |
| Drain-to-source leakage current | IDSS | 12 | A | VDS=650V, VGS=0V, TJ=25C (max) |
| Drain-to-source leakage current | IDSS | 8 | A | VDS=650V, VGS=0V, TJ=150C (max) |
| Gate threshold voltage | VGS(th) | 3.3 | V | VDS=VGS, ID=0.7mA (min) |
| Gate threshold voltage | VGS(th) | 4.8 | V | VDS=VGS, ID=0.7mA (max) |
| Input capacitance | CISS | 638 | pF | VGS=0V, VDS=400V, f=1MHz (typ) |
| Output capacitance | COSS | 72 | nC | VGS=0V, VDS=400V, f=1MHz (typ) |
| Reverse transfer capacitance | CRSS | 2 | nC | VGS=0V, VDS=400V, f=1MHz (typ) |
| Total gate charge | QG | 9 | nC | VDS=400V, VGS=0V to 10V, ID=18A (typ) |
| Output charge | QOSS | 80 | nC | VGS=0V, VDS=0V to 400V (typ) |
| Reverse recovery charge | QRR | 0 | nC | Excludes Qoss (typ) |
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