High Current Dual N Channel MOSFET PJSEMI PJM8205DNSG SOT 23 6 with 20V Drain Source Voltage Rating
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The PJM8205DNSG is a Dual N-Channel Enhancement Mode Power MOSFET featuring excellent RDS(on) and low gate charge due to its advanced trench process technology. It offers high power and current handling capabilities, with key specifications including VDS= 20V and ID= 5A, and RDS(on)
Product Attributes
- Brand: Pingjingsemi
- Marking Code: 8205
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Drain Current-Continuous | ID | 5 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 25 | A | ||
| Maximum Power Dissipation | PD | 1.25 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Thermal Resistance,Junction-to-Ambient | RJA | Note2 | 100 | C/W | ||
| Electrical Characteristics (Ta=25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=12V,VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | Note3,VDS=VGS,ID=250A | 0.5 | 0.7 | 1.2 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=4.5V,ID=5A | 20 | 25 | m | |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=2.5V,ID=4A | 25 | 32 | m | |
| Forward Transconductance | gFS | Note3,VDS=5V,ID=5A | 10 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=10V,VGS=0V,f=1MHz | 550 | pF | ||
| Output Capacitance | Coss | 125 | pF | |||
| Reverse Transfer Capacitance | Crss | 64 | pF | |||
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=10V, ID=5A,VGS=4V,RGEN=10 | 9 | nS | ||
| Turn-on Rise Time | tr | 10 | nS | |||
| Turn-off Delay Time | td(off) | 32 | nS | |||
| Turn-off Fall Time | tf | 24 | nS | |||
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=10V,ID=5A,VGS=4.5V | 9.5 | nC | ||
| Gate-Source Charge | Qgs | 2.1 | nC | |||
| Gate-Drain Charge | Qg | 1.4 | nC | |||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3,VGS=0V,IS=5A | 0.8 | 1.2 | V | |
| Diode Forward Current | IS | Note2 | 5 | A | ||
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina