China P channel MOSFET transistor RENESAS NP36P06SLG E1 AY with low on state resistance and gate protection diode for sale

P channel MOSFET transistor RENESAS NP36P06SLG E1 AY with low on state resistance and gate protection diode

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Product Description

Product Overview

This P-channel MOS Field Effect Transistor (NP36P06SLG) is designed for high current switching applications. It features super low on-state resistance and low input capacitance, with a built-in gate protection diode. This product is designed for automotive applications and is AEC-Q101 qualified.

Product Attributes

Brand: Renesas Electronics
Certifications: AEC-Q101 qualified
Material: Pb-free (external electrode)
Application: Automotive

Technical Specifications

Item	Symbol	Min	Typ	Max	Unit	Test Conditions
Drain to Source Voltage (VGS = 0 V)	VDSS			-60	V
Gate to Source Voltage (VDS = 0 V)	VGSS			20	V
Drain Current (DC) (Tc = 25 C)	ID(DC)			36	A
Drain Current (pulse)	ID(pulse)			108	A	Notes1
Total Power Dissipation (Tc = 25 C)	PT1			56	W
Total Power Dissipation (Ta = 25 C)	PT2			1.2	W
Channel Temperature	Tch			175	C
Storage Temperature	Tstg	-55		175	C
Single Avalanche Current	IAS			23.4	A	Notes2
Single Avalanche Energy	EAS			54.8	mJ	Notes2
Channel to Case Thermal Resistance	Rth(ch-c)		2.68		C/W	Notes3
Channel to Ambient Thermal Resistance	Rth(ch-a)		125		C/W	Notes3
Zero Gate Voltage Drain Current	IDSS			-10	A	VDS = -60 V, VGS = 0 V
Gate Leakage Current	IGSS			10	A	VGS = 20 V, VDS = 0 V
Gate to Source Cut-off Voltage	VGS(off)	-1.0	-2.0	-2.5	V	VDS = -10 V, ID = -1mA
Forward Transfer Admittance	\|yfs\|	12			S	VDS = -10 V, ID = -18 A (Notes4)
Drain to Source On-state Resistance	RDS(on)1		24	30	m	VGS = -10 V, ID = -18 A (Notes4)
Drain to Source On-state Resistance	RDS(on)2		27	40	m	VGS = -4.5 V, ID = -18 A (Notes4)
Input Capacitance	Ciss		3200		pF	VDS = -10 V, VGS = 0 V, f = 1 MHz
Output Capacitance	Coss		350		pF	VDS = -10 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance	Crss		205		pF	VDS = -10 V, VGS = 0 V, f = 1 MHz
Turn-on Delay Time	td(on)		7		ns	VDD = -30 V, ID = -18 A, VGS = -10 V, RG = 0
Rise Time	tr		12		ns	VDD = -30 V, ID = -18 A, VGS = -10 V, RG = 0
Turn-off Delay Time	td(off)		190		ns	VDD = -30 V, ID = -18 A, VGS = -10 V, RG = 0
Fall Time	tf		110		ns	VDD = -30 V, ID = -18 A, VGS = -10 V, RG = 0
Total Gate Charge	Qg		52		nC	VDD = -48 V, VGS = -10 V, ID = -36 A
Gate to Source Charge	Qgs		6.9		nC	VDD = -48 V, VGS = -10 V, ID = -36 A
Gate to Drain Charge	Qgd		15		nC	VDD = -48 V, VGS = -10 V, ID = -36 A
Body Diode Forward Voltage	VF(S-D)			1.2	V	IF = -36 A, VGS = 0 V (Notes4)
Reverse Recovery Time	trr		46		ns	IF = -36 A, VGS = 0 V, di/dt = -100 A/s
Reverse Recovery Charge	Qrr		75		nC	IF = -36 A, VGS = 0 V, di/dt = -100 A/s