N channel transistor PJSEMI PJM123NSA designed for small servo motor controls and switching circuits

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

PJM123NSA N- Enhancement Mode Field Effect Transistor

The PJM123NSA is an N-channel enhancement mode field-effect transistor designed for switching applications and small servo motor controls. It features a surface mount package, low RDS(ON), and ESD protection up to 2KV (HBM).

Product Attributes

Brand: PingJing
Package: SOT-23
Marking: B123

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Absolute Maximum Ratings
Drain-Source Voltage	VDS	TC=25, unless otherwise noted			100	V
Gate-Source Voltage	VGS				20	V
Continuous Drain Current	ID				0.17	A
Pulsed Drain Current	IDM	tp=10s			0.68	A
Power Dissipation	PD				0.9	W
Junction Temperature	TJ				150	C
Storage Temperature Range	TSTG		-55		150	C
Electrical Characteristics (TA=25, unless otherwise noted)
Drain-Source Breakdown Voltage	V(BR)DSS	VGS = 0V, ID = 250A	100	-	-	V
Gate Leakage Current	IGSS	VDS = 0V, VGS = 20V		-	10	A
Zero Gate Voltage Drain Current	IDSS	VDS =100V, VGS = 0V		-	1	A
Gate Threshold Voltage	VGS(th)	VDS = VGS, ID = 250A	1	-	3	V
Drain-Source On-Resistance	RDS(ON)	VGS = 10V, ID =0.17A		3.5	6
Drain-Source On-Resistance	RDS(ON)	VGS = 4.5V, ID =0.17A		3.8	10
Forward transconductance	gfs	VDS = 10V, ID = 0.17A	80	-	-	mS
Dynamic Parameters
Input Capacitance	Ciss	VDS = 25V, VGS = 0V, f = 1MHz		29	60	pF
Output Capacitance	Coss			10	15	pF
Reverse Transfer Capacitance	Crss			2	6	pF
Switching Parameters
Turn-On Delay Time	td(on)	VDD=30V, VGS=10V RGEN=50, ID=0.28A		-	8	ns
Turn-On Rise Time	tr			-	8	ns
Turn-Off Delay Time	td(off)			-	13	ns
Turn-Off Fall Time	tf			-	16	ns
Total Gate Charge	Qg	VDS=10V,VGS=10V,ID=0.22A		1.4	2	nC
Gate-Source Charge	Qgs			0.15	0.25	nC
Gate-Drain Charge	Qgd			0.2	0.4	nC
Drain-source Diode Parameters
Source-Drain Diode Current	IS			-	0.17	A
Forward Diode Voltage	VSD	VGS = 0V, IS = 0.34A		-	1.3	V