N channel enhancement mode transistor PJSEMI PJM02N60SA suitable for power dissipation and switching
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The PJM02N60SA is an N-channel enhancement mode field-effect transistor designed for high power and current handling capabilities. It features low on-resistance (RDS(ON)) and is suitable for DC/DC converters and battery switch applications.
Product Attributes
- Brand: PingJingSemi
- Package: SOT-23
- Revision: 2.0
- Date: May-2020
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | VDS=60V, ID=2A | 2 | A | ||
| Pulsed Drain Current | IDM | Note1 | 10 | A | ||
| Operating Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Thermal Characteristics | ||||||
| Total Power Dissipation | PD | 0.9 | W | |||
| Thermal Resistance, Junction to Ambient | RJA | Note2 | 139 | /W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =250µA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =60V,VGS = 0V | 1 | µA | ||
| Gate-Body Leakage Current | IGSS | VGS =±20V, VDS = 0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | Note3, VDS =VGS, ID =250µA | 1 | 2 | V | |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS =10V, ID =3A | 85 | mΩ | ||
| Drain-Source On-Resistance | RDS(on) | Note3, VGS =4.5V, ID =2A | 120 | mΩ | ||
| Forward Tranconductance | gFS | Note3, VDS =15V, ID =2A | 3 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =30V,VGS =0V,f =1MHz | 510 | pF | ||
| Output Capacitance | Coss | 34 | pF | |||
| Reverse Transfer Capacitance | Crss | 26 | pF | |||
| Switching Characteristics | ||||||
| Total Gate Charge | Qg | VDS =30V,ID =3A,VGS=4.5V | 7.5 | nC | ||
| Gate-Source Charge | Qgs | 1.4 | nC | |||
| Gate-Drain Charge | Qg | 3 | nC | |||
| Turn-On Delay Time | td(on) | VGS=10V,VDD=30V,ID =1.5A ,RG=1Ω | 6 | ns | ||
| Turn-On Rise Time | tr | 15 | ns | |||
| Turn-Off Delay Time | td(off) | 15 | ns | |||
| Turn-Off Fall Time | tf | 10 | ns | |||
| Source-Drain Diode Characteristics | ||||||
| Body Diode Voltage | VSD | IS=3A,VGS=0V | 1.2 | V | ||
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