Power Management MOSFET PJSEMI PJM20DN30DL Dual N Channel with RoHS Compliance and Low On Resistance
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Product Description
Product Overview
The PJM20DN30DL is a Dual N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is 100% Avalanche Tested and RoHS Compliant, making it a reliable choice for various power management applications. This MOSFET offers low on-resistance and is halogen and antimony free, with a Moisture Sensitivity Level of 3.
Product Attributes
- Brand: PJM
- Technology: Advanced Trench Technology
- Certifications: RoHS Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Product Summary | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Continuous Drain Current | ID | 18 | A | |||
| RDS(on) @ VGS=10V | RDS(on) | ID=8A | 13 | m | ||
| RDS(on) @ VGS=4.5V | RDS(on) | ID=5A | 21 | m | ||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TC=25 | 18 | A | ||
| Pulsed Drain Current | IDM | Note1 | 60 | A | ||
| Maximum Power Dissipation | PD | 5 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Single Pulse Avalanche Energy | EAS | Note2 | 20 | mJ | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A, Note3 | 1 | 1.6 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=10V,ID=8A, Note3 | 13 | m | ||
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V,ID=5A, Note3 | 21 | m | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHz | 805 | pF | ||
| Output Capacitance | Coss | VDS=15V,VGS=0V,f=1MHz | 103 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS=0V,f=1MHz | 82 | pF | ||
| Total Gate Charge | Qg | VDS=15V,ID=15A,VGS=10V | 16 | nC | ||
| Gate-Source Charge | Qgs | VDS=15V,ID=15A,VGS=10V | 3.6 | nC | ||
| Gate-Drain Charge | Qgd | VDS=15V,ID=15A,VGS=10V | 3.4 | nC | ||
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=15V,ID=15A,VGS=10V,RGEN=3 | 6 | nS | ||
| Turn-on Rise Time | tr | VDD=15V,ID=15A,VGS=10V,RGEN=3 | 16 | nS | ||
| Turn-off Delay Time | td(off) | VDD=15V,ID=15A,VGS=10V,RGEN=3 | 17 | nS | ||
| Turn-off Fall Time | tf | VDD=15V,ID=15A,VGS=10V,RGEN=3 | 5 | nS | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | IS=10A, Note3 | 1.2 | V | ||
| Diode Forward Current | IS | 18 | A | |||
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Sellina