N Channel Enhancement Mode MOSFET PANJIT PJA3460 60V Low On Resistance for Switching Applications
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Product Description
Product Overview
The PPJA3460 is a 60V N-Channel Enhancement Mode MOSFET designed for efficient switching applications. It features low on-resistance (RDS(ON)) at various gate-source voltages and drain currents, utilizing an advanced trench process. This MOSFET is specifically engineered for switch load and PWM applications. It is compliant with EU RoHS 2011/65/EU directive and manufactured with a green molding compound (Halogen Free) according to IEC61249 Std.
Product Attributes
- Brand: Panjit International Inc.
- Package Type: SOT-23
- Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen Free)
- Marking: A60
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Static Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1.0 | 1.75 | 2.5 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V, ID=2.0A | - | 55 | 75 | m |
| Drain-Source On-State Resistance | RDS(on) | VGS=4.5V, ID=1.0A | - | 63 | 90 | m |
| Zero Gate Voltage Drain Current | IDSS | VDS=48V, VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=+20V, VDS=0V | - | - | +100 | nA |
| Total Gate Charge | Qg | VDS=48V, ID=2.0A, VGS=10V (Note 1,2) | - | 9.3 | - | nC |
| Gate-Source Charge | Qgs | - | 2.2 | - | ||
| Gate-Drain Charge | Qg | - | 1.9 | - | ||
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1.0MHZ | - | 509 | - | pF |
| Output Capacitance | Coss | - | 47 | - | ||
| Reverse Transfer Capacitance | Crss | - | 23 | - | ||
| Turn-On Delay Time | td(on) | VDD=30V, ID=2.0A, VGS=10V, RG=3.3 (Note 1,2) | - | 3.2 | - | ns |
| Turn-On Rise Time | tr | - | 9.7 | - | ||
| Turn-Off Delay Time | td(off) | - | 18.5 | - | ||
| Turn-Off Fall Time | tf | - | 6.4 | - | ||
| Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current | IS | --- | - | 2.5 | A | |
| Diode Forward Voltage | VSD | IS=1A, VGS=0V | - | 0.77 | 1.2 | V |
| Continuous Drain Current | ID | - | - | 2.5 | A | |
| Pulsed Drain Current | IDM | (Note 4) | - | - | 10 | A |
| Power Dissipation | PD | Ta=25oC | - | 1.25 | - | W |
| Derate above 25oC | - | 10 | - | mW/ oC | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | ~ | 150 | oC | |
| Typical Thermal resistance - Junction to Ambient | RJA | (Note 3) | - | 100 | - | oC/W |
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