China Renesas 3P4MH13S13AZ mold SCR featuring flame retardant epoxy resin and P gate fully diffused design for sale

Renesas 3P4MH13S13AZ mold SCR featuring flame retardant epoxy resin and P gate fully diffused design

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Renesas Electronics 3P4MH, 3P6MH Mold SCR Data Sheet

The 3P4MH and 3P6MH are P-gate fully diffused mold SCRs with an average on-current of 3 A. They feature a small and lightweight package (TO-202AA) for easy handling and processing. These SCRs employ flame-retardant epoxy resin (UL94V-0) and are suitable for noncontact switches in consumer electronic equipment, electric equipment, audio equipment, and light industry equipment.

Product Attributes

Brand: Renesas Electronics
Origin: Printed in Japan
Material: Flame-retardant epoxy resin (UL94V-0)
Package Type: TO-202AA

Technical Specifications

Parameter	Symbol	3P4MH Ratings	3P6MH Ratings	Unit	Conditions	Remarks
Non-repetitive peak reverse voltage	VRSM	500	700	V	RGK = 1 k
Non-repetitive peak off-state voltage	VDSM	500	700	V	RGK = 1 k
Repetitive peak reverse voltage	VRRM	400	600	V	RGK = 1 k
Repetitive peak off-voltage	VDRM	400	600	V	RGK = 1 k
Average on-state current	IT(AV)	3	3	A	(Tc = 87C, Single half-wave, = 180)	Refer to Figure 11.
Effective on-state current	IT(RMS)	4.7	4.7	A
Surge on-state current	ITSM	65 (f = 50 Hz, Sine half-wave, 1 cycle)	70 (f = 60 Hz, Sine half-wave, 1 cycle)	A		Refer to Figure 2.
Fusing current	it dt	20	20	A	(1 mst10 ms)
Critical rate of rise of on-state current	dIT/dt	50	50	A/s
Peak gate power dissipation	PGM	2	2	W	(f50 Hz, Duty10%)	Refer to Figure 3.
Average gate power dissipation	PG(AV)	0.2	0.2	W
Peak gate forward current	IFGM	1	1	A	(f50 Hz, Duty10%)
Peak gate reverse voltage	VRGM	6	6	V
Junction temperature	Tj	-40 to +125	-40 to +125	C
Storage temperature	Tstg	-55 to +150	-55 to +150	C
Repeat peak reverse current	IRRM	-	-	100 A	Tj = 25C, VRM	MIN.