MOSFET 50V N Channel PANJIT PJA138K AU R1 000A1 Featuring ESD Protection and Low On State Resistance
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Product Description
Product Overview
The PPJA138K-AU is a 50V N-Channel Enhancement Mode MOSFET featuring ESD protection. It utilizes advanced Trench Process Technology and is specifically designed for battery-operated systems and solid-state relays, including drivers for relays, displays, and memories. This AEC-Q101 qualified component offers low on-state resistance at various gate-source voltages and drain currents, making it suitable for efficient power management applications. It is also ESD protected (2KV HBM) and compliant with EU RoHS 2.0 and IEC 61249 standards.
Product Attributes
- Brand: Panjit International Inc.
- Certifications: AEC-Q101 qualified, EU RoHS 2.0, IEC 61249 standard
- ESD Protection: 2KV HBM
- Material: Green molding compound
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,ID=250uA | 50 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 0.8 | 1.0 | 1.5 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V,ID=500mA | - | 0.96 | 1.6 | |
| VGS=4.5V,ID=200mA | - | 1.25 | 2.5 | V | ||
| VGS=2.5V,ID=100mA | - | 2.73 | 4.5 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=50V,VGS=0V | - | 0.01 | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=+20V,VDS=0V | - | +3.0 | +10 | uA |
| Total Gate Charge | Qg | VDS=25V, ID=250mA, VGS=4.5V (Note 1,2) | - | 0.63 | 1 | nC |
| Gate-Source Charge | Qgs | - | 0.2 | - | ||
| Gate-Drain Charge | Qgd | - | 0.23 | - | ||
| Capacitance | VDS=25V, VGS=0V, f=1.0MHZ | - | 25 | 50 | pF | |
| Input Capacitance (Ciss) | - | 9.5 | 20 | |||
| Output Capacitance (Coss) | - | 2.1 | 5 | |||
| Switching Time | Turn-On Delay Time | VDD=25V, ID=500mA, VGS=10V, RG=6 (Note 1,2) | - | 2.2 | 5 | ns |
| Turn-On Rise Time | - | 19.2 | 38 | |||
| Turn-Off Delay Time | - | 6.2 | 12 | |||
| Turn-Off Fall Time | - | 23 | 50 | |||
| Maximum Continuous Drain-Source Diode Forward Current | IS | --- | - | 500 | mA | |
| Diode Forward Voltage | VSD | IS=500mA, VGS=0V | - | 0.86 | 1.5 | V |
| Power Dissipation | PD | TA=25oC | 500 | mW | ||
| Derate above 25oC | 4 | mW/ oC | ||||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | ~ | 150 | oC | |
| Typical Thermal Resistance - Junction to Ambient | RJA | (Note 3) | 250 | oC/W |
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