N Channel Enhancement Mode Power MOSFET PJSEMI PJM80N68TE with 68V Drain Source Voltage and 80A Current
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Product Description
Product Overview
The PJM80N68TE is an N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It offers high performance with a VDS of 68V and ID of 80A, and a low RDS(on) of less than 8.6m at VGS=10V. This RoHS compliant and Halogen/Antimony free component is ideal for load switching, PWM applications, and power management.
Product Attributes
- Brand: PingJingSemi
- Certifications: RoHS Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 68 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | 80 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 320 | A | ||
| Single Pulse Avalanche Energy | EAS | Note2 | 81 | mJ | ||
| Maximum Power Dissipation | PD | 147 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Thermal Resistance, Junction-to-Case | RJC | 0.85 | C/W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 68 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=68V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | Note3,VDS=VGS,ID=250A | 2 | 2.8 | 4 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=10V,ID=30A | 7.5 | 8.6 | m | |
| Input Capacitance | Ciss | VDS=25V,VGS=0V,f=1MHz | 4050 | pF | ||
| Output Capacitance | Coss | VDS=25V,VGS=0V,f=1MHz | 255 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V,f=1MHz | 220 | pF | ||
| Total Gate Charge | Qg | VDS=30V,ID=20A, VGS=10V | 35 | nC | ||
| Gate-Source Charge | Qgs | VDS=30V,ID=20A, VGS=10V | 11 | nC | ||
| Gate-Drain Charge | Qgd | VDS=30V,ID=20A, VGS=10V | 9 | nC | ||
| Turn-on Delay Time | td(on) | VDD=30V, ID=20A, VGS=10V, RGEN=6 | 15 | nS | ||
| Turn-on Rise Time | tr | VDD=30V, ID=20A, VGS=10V, RGEN=6 | 94 | nS | ||
| Turn-off Delay Time | td(off) | VDD=30V, ID=20A, VGS=10V, RGEN=6 | 46 | nS | ||
| Turn-off Fall Time | tf | VDD=30V, ID=20A, VGS=10V, RGEN=6 | 32 | nS | ||
| Diode Forward Voltage | VSD | VGS=0V,IS=30A | 1.2 | V | ||
| Diode Forward Current | IS | 80 | A | |||
| Forward Transconductance | gFS | Note3,VDS=5V,ID=2A | 6 | S | ||
| Gate Resistance | Rg | VDS=0V,VGS=0V,f=1MHz | 0.55 | |||
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina