N Channel Power MOSFET PJSEMI PJM60H02NTE with Continuous 2A Drain Current and TO 252 Package Design
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Product Description
Product Overview
The PJM60H02NTE is an N-Channel Enhancement Mode Power MOSFET designed for power switch circuits in adaptors and chargers. It offers fast switching, low gate charge, and low RDS(on), making it an efficient component for these applications. Key features include a high Drain-Source Voltage of 600V and a continuous Drain Current of 2A.
Product Attributes
- Brand: PingJingSemi
- Product Code: PJM60H02NTE
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 600 | V | |||
| Gate-Source Voltage | VGS | 30 | V | |||
| Drain Current-Continuous | ID | 2 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 8 | A | ||
| Single pulse avalanche energy | EAS | Note4 | 80 | mJ | ||
| Avalanche energy, Repetitive | EAR | Note1 | 6.4 | mJ | ||
| Avalanche Current | IAR | Note1 | 1.1 | A | ||
| Maximum Power Dissipation | PD | 35 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Thermal Resistance,Junction-to-Ambient | RJA | Note2 | 62 | C/W | ||
| Maximum Junction-to-Case | RJC | Note2 | 3.57 | C/W | ||
| Electrical Characteristics (Ta=25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 600 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=600V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=30V,VDS=0V | -- | -- | 10 | A |
| Gate Threshold Voltage | VGS(th) | Note3,VDS=VGS,ID=250A | 2 | 3 | 4 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=10V,ID=1A | -- | 3.6 | 4.3 | |
| Forward Transconductance | gFS | Note3,VDS=15V,ID=1A | -- | 1.8 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V,VGS=0V,f=1MHz | -- | 280 | -- | pF |
| Output Capacitance | Coss | -- | 31 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 5.4 | -- | pF | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=300V, ID=2A, VGS=10V,RG=9.1 | -- | 7 | -- | nS |
| Turn-on Rise Time | tr | -- | 5 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 26 | -- | nS | |
| Turn-off Fall Time | tf | -- | 10.5 | -- | nS | |
| Total Gate Charge | Qg | VDD=300V,ID=2A, VGS=10V | -- | 8.5 | -- | nC |
| Gate-Source Charge | Qgs | -- | 1.5 | -- | nC | |
| Gate-Drain Charge | Qg | -- | 4.0 | -- | nC | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3,VGS=0V,IS=2A | -- | -- | 1.5 | V |
| Diode Forward Current | IS | Note2 | -- | -- | 2 | A |
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