30V N Channel Enhancement Mode MOSFET PANJIT PJA3400 AU suitable for switch load PWM applications
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The PJA3400-AU is a 30V N-Channel Enhancement Mode MOSFET designed for switch load and PWM applications. It features advanced trench process technology, AEC-Q101 qualification, and compliance with EU RoHS 2.0 and IEC 61249 standards. This MOSFET offers low on-state resistance at various gate-source voltages, making it suitable for efficient power management.
Product Attributes
- Brand: Panjit International Inc.
- Package: SOT-23
- Certifications: AEC-Q101 qualified, Lead free in compliance with EU RoHS 2.0, Green molding compound as per IEC 61249 standard
- Origin: Not specified in the text
- Material: Not specified in the text
- Color: Not specified in the text
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| RDS(ON) | RDS(on) | VGS@10V, ID@4.9A | - | 28 | 38 | m |
| RDS(on) | VGS@4.5V, ID@3.5A | - | 32 | 44 | m | |
| RDS(on) | VGS@2.5V, ID@2.7A | - | 45 | 60 | m | |
| Static Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 0.5 | 0.84 | 1.3 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=+12V, VDS=0V | - | - | +100 | nA |
| Total Gate Charge | Qg | VDS=15V, ID=4.9A, VGS=10V | - | 5.7 | - | nC |
| Gate-Source Charge | Qgs | VDS=15V, ID=4.9A, VGS=10V | - | 1.1 | - | nC |
| Gate-Drain Charge | Qg | VDS=15V, ID=4.9A, VGS=10V | - | 1.5 | - | nC |
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1MHZ | - | 490 | - | pF |
| Output Capacitance | Coss | VDS=15V, VGS=0V, f=1MHZ | - | 44 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=15V, VGS=0V, f=1MHZ | - | 32 | - | pF |
| Switching Times | td(on) | VDD=15V, ID=4.9A, VGS=10V, RG=3 | - | 2 | - | ns |
| tr | VDD=15V, ID=4.9A, VGS=10V, RG=3 | - | 57 | - | ns | |
| Switching Times | td(off) | VDD=15V, ID=4.9A, VGS=10V, RG=3 | - | 78 | - | ns |
| tf | VDD=15V, ID=4.9A, VGS=10V, RG=3 | - | 79 | - | ns | |
| Drain-Source Diode Forward Current | IS | - | - | - | 1.5 | A |
| Diode Forward Voltage | VSD | IS=1A, VGS=0V | - | 0.77 | 1.2 | V |
| Drain-Source Voltage | VDS | - | - | - | 30 | V |
| Gate-Source Voltage | VGS | - | - | - | +12 | V |
| Continuous Drain Current | ID | Note 4 | - | - | 4.9 | A |
| Pulsed Drain Current | IDM | Note 1 | - | - | 19.6 | A |
| Power Dissipation | PD | Ta=25oC | - | - | 1.25 | W |
| Derate above 25oC | - | - | - | - | 10 | mW/ oC |
| Operating Junction and Storage Temperature Range | TJ,TSTG | - | -55 | ~ | 150 | oC |
| Typical Thermal Resistance | RJA | Note 3,4 | - | 100 | - | oC/W |
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