Switching Applications Power MOSFET PJSEMI PJM05C20DFA Complementary N Channel and P Channel Device
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The PJM05C20DFA is a complementary N-Channel and P-Channel Power MOSFET designed for switching applications and DC/DC converters. It features very fast switching speeds and utilizes Trench MOSFET technology. The device offers high performance with low on-resistance characteristics for both N-channel (VDS=20V, ID=5A) and P-channel (VDS=-20V, ID=-5A) configurations.
Product Attributes
- Brand: Pingjingsemi
- Product Code: PJM05C20DFA
- Package: DFN2x2A-6L
- Revision: 1.0
- Date: May-2022
Technical Specifications
| Parameter | Symbol | N-Channel Test Condition | Min. | Typ. | Max. | Unit | P-Channel Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 20 | -- | -- | V | VGS=0V,ID=-250A | 20 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | -- | -- | 1 | A | VDS=-20V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=12V,VDS=0V | -- | -- | 100 | nA | VGS=12V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 0.5 | 0.7 | 1.0 | V | VDS=VGS,ID=-250A | 0.5 | 0.7 | 0.9 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V,ID=4.5A | -- | -- | 28 | m | VGS=-4.5V,ID=-4.1A | -- | -- | 45 | m |
| Drain-Source On-Resistance | RDS(on) | VGS=2.5V,ID=4A | -- | -- | 35 | m | VGS=-2.5V,ID=-3A | -- | -- | 70 | m |
| Forward Transconductance | gFS | VDS=15V,ID=5A | -- | 25 | -- | S | VDS=-5V,ID=-4.1A | -- | 6 | -- | S |
| Input Capacitance | Ciss | VDS=8V,VGS=0V,f=1MHz | -- | 500 | -- | pF | VDS=-4V,VGS=0V,f=1MHz | -- | 740 | -- | pF |
| Output Capacitance | Coss | -- | -- | 295 | -- | pF | -- | -- | 290 | -- | pF |
| Reverse Transfer Capacitance | Crss | -- | -- | 96 | -- | pF | -- | -- | 190 | -- | pF |
| Turn-on Delay Time | td(on) | VDD=10V, ID=1A VGS=4.5V,RGEN=6 | -- | 11 | -- | nS | VDD=-4V,RL=1.2 VGS=-4.5V,RGEN=1 | -- | 12 | -- | nS |
| Turn-on Rise Time | tr | -- | -- | 30 | -- | nS | -- | -- | 35 | -- | nS |
| Turn-off Delay Time | td(off) | -- | -- | 35 | -- | nS | -- | -- | 30 | -- | nS |
| Turn-off Fall Time | tf | -- | -- | 10 | -- | nS | -- | -- | 10 | -- | nS |
| Total Gate Charge | Qg | VDS=10V,ID=3A,VGS=4.5V | -- | 10 | -- | nC | VDS=-4V,ID=-4.1A, VGS=-4.5V | -- | 7.8 | -- | nC |
| Gate-Source Charge | Qgs | -- | -- | 2.3 | -- | nC | -- | -- | 1.2 | -- | nC |
| Gate-Drain Charge | Qg d | -- | -- | 2.9 | -- | nC | -- | -- | 1.6 | -- | nC |
| Diode Forward Voltage | VSD | VGS=0V,IS=5A | -- | -- | 1.2 | V | VGS=0V,IS=-5A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | -- | -- | -- | 5 | A | -- | -- | -- | 5 | A |
| Maximum Power Dissipation | PD | -- | -- | 1.2 | W | -- | -- | 1.2 | W | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | -- | 150 | -55 | -- | 150 | ||||
| Thermal Resistance,Junction-to-Ambient | RJA | Note2 | -- | 104 | -- | /W | Note2 | -- | 104 | -- | /W |
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