Power MOSFET PJSEMI PJM08N30DF N Channel with Low RDS on and 30V Drain Source Breakdown Voltage
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The PJM08N30DF is an N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It is RoHS and Reach compliant, halogen and antimony free, and has a Moisture Sensitivity Level 1. This MOSFET is designed for load switching, PWM applications, and power management, offering a VDS of 30V, ID of 8A, and low RDS(on) at various gate-source voltages.
Product Attributes
- Brand: PingJing Semiconductor
- Certifications: RoHS, Reach Compliant
- Material: Halogen and Antimony Free
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1 | 1.6 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=10V,ID=5A | -- | 10 | 20 | m |
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V,ID=3A | -- | 16 | 29 | m |
| Forward Transconductance | gFS | VDS=5V,ID=2A | -- | 5.5 | -- | S |
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHz | -- | 625 | -- | pF |
| Output Capacitance | Coss | VDS=15V,VGS=0V,f=1MHz | -- | 125 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS=0V,f=1MHz | -- | 27.5 | -- | pF |
| Total Gate Charge | Qg | VDS=15V, ID=5.8A, VGS=10V | -- | 10 | -- | nC |
| Gate-Source Charge | Qgs | VDS=15V, ID=5.8A, VGS=10V | -- | 1.7 | -- | nC |
| Gate-Drain Charge | Qg | VDS=15V, ID=5.8A, VGS=10V | -- | 2 | -- | nC |
| Turn-on Delay Time | td(on) | VDD=15V, ID=3A, VGS=10V, RGEN=3 | -- | 6 | -- | nS |
| Turn-on Rise Time | tr | VDD=15V, ID=3A, VGS=10V, RGEN=3 | -- | 16 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=15V, ID=3A, VGS=10V, RGEN=3 | -- | 15 | -- | nS |
| Turn-off Fall Time | tf | VDD=15V, ID=3A, VGS=10V, RGEN=3 | -- | 6 | -- | nS |
| Diode Forward Voltage | VSD | VGS=0V,IS=8A | -- | -- | 1.2 | V |
| Drain-Source Voltage | VDS | -- | -- | 30 | V | |
| Gate-Source Voltage | VGS | -- | -- | 20 | V | |
| Drain Current-Continuous | ID | -- | -- | 8 | A | |
| Drain Current-Pulsed | IDM | Note1 | -- | -- | 32 | A |
| Maximum Power Dissipation | PD | -- | -- | 2 | W | |
| Single Pulsed Avalanche Energy | EAS | Note2 | -- | -- | 25 | mJ |
| Junction Temperature | TJ | -- | -- | 150 | C | |
| Storage Temperature Range | TSTG | -55 | -- | +150 | C | |
| Thermal Resistance,Junction-to-Ambient | RJA | Note3 | -- | 62.5 | -- | C/W |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina