PNP transistor ROHM 2SA2071T100Q designed for low frequency amplifiers and high speed switching circuit

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Product Description

Product Overview

The 2SA2071 is a middle power PNP transistor designed for high-speed switching applications. It features low saturation voltage, strong discharge power for inductive and capacitive loads, and complements the 2SC5894 transistor. This component is suitable for low frequency amplifiers and high-speed switching circuits.

Product Attributes

Brand: ROHM
Package: SOT-89 (MPT3), SC-62
Origin: Not specified
Material: Not specified
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Conditions	Value	Unit
Collector-base voltage	VCBO		-60	V
Collector-emitter voltage	VCEO		-60	V
Emitter-base voltage	VEBO		-6	V
Collector current	IC		-3	A
Collector current (Pulsed)	ICP*1	Pw10s duty10%	-6	A
Power dissipation	PD*2	Each terminal mounted on a reference land.	0.5	W
Power dissipation	PD*3	Mounted on a ceramic board(40400.7mm).	2.0	W
Junction temperature	Tj		150
Range of storage temperature	Tstg		-55 to +150
Collector-base breakdown voltage	BVCBO	IC = -100A	-60	V
Collector-emitter breakdown voltage	BVCEO	IC = -1mA	-60	V
Emitter-base breakdown voltage	BVEBO	IE = -100A	-6	V
Collector cut-off current	ICBO	VCB = -40V	-1.0	A
Emitter cut-off current	IEBO	VEB = -4V	-1.0	A
Collector-emitter saturation voltage	VCE(sat)*4	IC = -2A, IB = -0.2A	-200 (Typ.)	mV
DC current gain	hFE	VCE = -2V, IC = -100mA	120 - 270	-
Transition frequency	fT*4	VCE = -10V, IE = 100mA, f = 10MHz	180	MHz
Output capacitance	Cob	VCB = -10V, IE = 0A, f = 1MHz	50	pF
Turn-On time	ton	IC = -3A, IB1 = -300mA, IB2 = 300mA, VCC -25V, RL = 8.3 See test circuit	20	ns
Storage time	tstg		150	ns
Fall time	tf		20	ns