power management solution PJSEMI PJM2305PSA P Channel Power MOSFET with low RDS ON and fast switching
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Delivery Time:
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Product Description
Product Overview
The PJM2305PSA is a P-Channel Power MOSFET designed for efficient power management. It offers fast switching speeds, low gate charge, and low RDS(ON), making it suitable for load switching and PWM applications. Its compact SOT-23 package is ideal for space-constrained designs.
Product Attributes
- Brand: Pingjing Semiconductor
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Units |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 12 | V | |||
| Gate-Source Voltage | VGS | 8 | V | |||
| Continuous Drain Current | -ID | 4.1 | A | |||
| Power Dissipation | PD | 1.4 | W | |||
| Junction and Storage Temperature Range | TJ, TSTG | -55 to 150 | 150 | C | ||
| Thermal Characteristics | ||||||
| Maximum Junction-to-Ambient | RJA | Note1 | 89 | C/W | ||
| Electrical Characteristics (Ta=25 unless otherwise specified) | ||||||
| Drain-source breakdown voltage | -V(BR)DSS | VGS = 0V, ID =-250A | 12 | V | ||
| Drain to Source Leakage Current | -IDSS | VDS =-12V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS= 8V, VDS= 0V | 100 | nA | ||
| Gate threshold voltage | -VGS(th) | Note1, VDS =VGS, ID = -250A | 0.5 | 0.9 | V | |
| Drain-source on-resistance | RDS(on) | Note1, VGS = -4.5V, ID= -3.5A | 45 | 60 | m | |
| Note1, VGS = -2.5V, ID= -3A | 55 | 70 | m | |||
| Note1, VGS =-1.8V, ID= -2.0A | 75 | 90 | m | |||
| Forward tranconductance | gFS | Note1, VDS =-5V, ID= -4.1A | 6 | S | ||
| Dynamic characteristics | ||||||
| Input Capacitance | Ciss | VDS =-4V,VGS =0V,f=1MHz | 740 | pF | ||
| Output Capacitance | Coss | VDS =-4V,VGS =0V,f=1MHz | 290 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =-4V,VGS =0V,f=1MHz | 190 | pF | ||
| Switching Characteristics | ||||||
| Turn-on delay time | td(on) | ID=-3.3AVDD=-4V, VGS=-4.5VRGEN =1 | 13 | ns | ||
| Turn-on rise time | tr | ID=-3.3AVDD=-4V, VGS=-4.5VRGEN =1 | 35 | ns | ||
| Turn-off delay time | td(off) | ID=-3.3AVDD=-4V, VGS=-4.5VRGEN =1 | 32 | ns | ||
| Turn-off fall time | tf | ID=-3.3AVDD=-4V, VGS=-4.5VRGEN =1 | 10 | ns | ||
| Total gate charge | Qg | VDD =-4V,VGS =-4.5V,ID =-4.1A | 4.5 | 9 | nC | |
| Gate-source charge | Qgs | VDD =-4V,VGS =-2.5V,ID =-4.1A | 1.2 | nC | ||
| Gate-drain charge | Qg | VDD =-4V,VGS =-2.5V,ID =-4.1A | 1.6 | nC | ||
| Source-Drain Diode characteristics | ||||||
| Diode Forward voltage | -VDS | VGS =0V, IS=-3.3A | 1.2 | V | ||
| Continuous source-drain diode current | -IS | 1.4 | A | |||
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