N Channel MOSFET PANJIT 2N7002KTB R1 00001 with 2KV HBM ESD protection and trench process technology
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The 2N7002KTB is an N-Channel Enhancement Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It offers very low leakage current in the off condition and is specifically designed for battery-operated systems, solid-state relays, and various driver applications including relays, displays, lamps, solenoids, and memories. This ESD-protected device (2KV HBM) is lead-free and compliant with EU RoHS2.0 directives, utilizing a green molding compound as per IEC61249 Std. (Halogen Free).
Product Attributes
- Brand: Panjit International Inc.
- Certifications: EU RoHS2.0 (2011/65/EU & 2015/865/EU directive), IEC61249 Std. (Halogen Free), ESD Protected 2KV HBM
- Material: Green molding compound
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=10A | 60 | - | - | V |
| Gate Threshold Voltage | VGS (th) | VDS=VGS, ID=250A | 1 | - | 2.5 | V |
| Drain-Source On-State Resistance | RDS (on) | VGS=4.5V, ID=200mA | - | - | 4.0 | |
| Drain-Source On-State Resistance | RDS (on) | VGS=10V, ID=500mA | - | - | 3.0 | |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | - | - | 1 | A |
| Gate Body Leakage | IGSS | VGS=+20V, VDS=0V | - | - | +10 | A |
| Forward Transconductance | g fS | VDS=15V, ID=250mA | 100 | - | - | mS |
| Total Gate Charge | Qg | VDS=15V, ID=200mA, VGS=4.5V | - | - | 0.8 | nC |
| Turn-On Delay Time | td (on) | VDD=30V, RL=150, ID=200mA, VGEN=10V, RG=10 | - | - | 20 | ns |
| Turn-Off Delay Time | td (off) | - | - | - | 125 | ns |
| Input Capacitance | C i ss | VDS=25V, VGS=0V, f=1.0MHz | - | - | 35 | pF |
| Output Capacitance | C oss | - | - | - | 10 | pF |
| Reverse Transfer Capacitance | C rss | - | - | - | 5 | pF |
| Diode Forward Voltage | V S D | IS=200mA, V GS=0V | - | 0.82 | 1.3 | V |
| Continuous Diode Forward Current | Is | - | - | - | 115 | mA |
| Pulsed Diode Forward Current | IsM | - | - | - | 800 | mA |
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