Low saturation voltage transistor ROHM 2SA1952TLQ ideal for fast switching and wide operating range

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Product Description

Product Overview

The 2SA1952 is a high-speed switching transistor designed for efficient operation. It features low saturation voltage, a wide safe operating area, and complements the 2SC5103 transistor. Ideal for applications requiring fast switching characteristics.

Product Attributes

Brand: ROHM
EIAJ Code: SC-63
Package: CPT3

Technical Specifications

Parameter	Symbol	Limits	Unit	Conditions
Collector-base voltage	VCBO	-100	V
Collector-emitter voltage	VCEO	-60	V
Emitter-base voltage	VEBO	-5	V
Collector current	IC	-5	A
Collector current (Pulse)	IC(Pulse)	-10	A(Pulse)
Collector power dissipation	PC	1	W	Ta=25C
Collector power dissipation	PC	10	W(Tc=25C)
Junction temperature	Tj	150	C
Storage temperature	Tstg	-55~+150	C
Collector-emitter breakdown voltage	BVCBO	-100	V	IC = -50A
Collector-emitter breakdown voltage	BVCEO	-60	V	IC = -1mA
Emitter-base breakdown voltage	BVEBO	-5	V	IE = -50A
Collector cutoff current	ICBO	-10	A	VCB = -100V
Emitter cutoff current	IEBO	-10	A	VEB = -5V
Collector-emitter saturation voltage	VCE(sat)	-0.3	V	IC/IB=3A/0.15A
Collector-emitter saturation voltage	VCE(sat)	-0.5	V	IC/IB=4A/0.2A
Base-emitter saturation voltage	VBE(sat)	-1.2	V	IC/IB=3A/0.15A
Base-emitter saturation voltage	VBE(sat)	-1.5	V	IC/IB=4A/0.2A
DC current transfer ratio	hFE	80~130		VCE = 2V , IC = 1A
Transition frequency	fT	270	MHz	VCE = 10V , IE = 0.5A , f = 30MHz
Output capacitance	Cob	10	pF	VCB = 10V , IE = 0A , f = 1MHz
Turn-on time	ton	0.3	s	IC = 3A , RL = 10
Storage time	tstg	1.5	s	IB1 = IB2 = 0.15A
Fall time	tf	0.3	s	VCC 30V