PJM2319PSA P Enhancement Field Effect Transistor Engineered for Low On Resistance and Power Management

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Product Description

PJM2319PSA P-Enhancement Field Effect Transistor

The PJM2319PSA is a P-Enhancement Mode Field Effect Transistor designed for fast switching and ultra-low Qgd. It features a low RDS(on) of 80 m @VGS= -10V, making it suitable for applications such as Load Switches and DC/DC Converters.

Product Attributes

Brand: PingJingSemi
Product Code: PJM2319PSA
Type: P-Enhancement Field Effect Transistor

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Absolute Maximum Ratings
Drain-Source Voltage	-VDS				40	V
Gate-Source Voltage	VGS				20	V
Continuous Drain Current	-ID	TC = 25			4.4	A
Continuous Drain Current	-ID	TA = 25			3.1	A
Pulsed Drain Current	-IDM	Note 1			20	A
Total Power Dissipation	PD				1.25	W
Operating Junction Temperature	TJ				150
Storage Temperature	TSTG		-55		+150
Thermal Resistance, Junction-to-Ambient	RJA	SOT-23		100		/W
Electrical Characteristics
Drain-to-Source Breakdown Voltage	-BVDSS	VGS = 0 V, ID = -250uA	40	-	-	V
Zero Gate Voltage Drain Current	-IDSS	VDS =-40 V, VGS = 0V	-	-	1	uA
Gate-to-Source Leakage Current	IGSS	VDS = 0 V, VGS = 20V	-	-	100	nA
Gate Threshold Voltage	-VGS(th)	Note2, VGS = VDS, ID = -250uA	1	-	3	V
Drain-to-Source On-Resistance	RDS(on)	Note2, VGS = -10V, ID = -3.1A	-	66	80	m
Drain-to-Source On-Resistance	RDS(on)	Note2, VGS = -4.5V, ID = -2.6A	-	90	120	m
Forward Transconductance	gFS	Note2, VDS = -15 V, ID = -3.1A	-	10	-	S
Dynamic Characteristics
Input Capacitance	Ciss	VGS = 0 V, f = 1.0 MHz, VDS = -20 V	-	595	-	pF
Output Capacitance	Coss		-	76	-	pF
Reverse Transfer Capacitance	Crss		-	61	-	pF
Total Gate Charge	Qg	VDS =-20V, VGS =-4.5V, ID = -3.1A	-	7	11	nC
Gate-Source Charge	Qgs		-	2.5	-
Gate-Drain Charge	Qg		-	3.2	-
Turn-On Delay Time	td(on)	VDS =-20V, ID=-2.5A, VGEN =-10V, RL =8,	-	8	16	ns
Turn-On Rise Time	tr		-	9	18
Turn-Off Delay Time	td(off)		-	20	30
Turn-Off Fall Time	tf		-	8	16
Source-Drain Diode Characteristics
Body Diode Voltage	-VSD	IS=-2.5A, VGS=0V		0.8	1.5	V
Continuous Source-Drain Diode Current	-IS				1	A