Power MOSFET PJSEMI PJM2304NSA featuring low gate charge and fast switching for battery protection
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Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
The PJM2304NSA is an N-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features fast switching, low gate charge, and low RDS(on), making it suitable for applications requiring high power and current handling capabilities. Key applications include battery protection, load switching, and general power management.
Product Attributes
- Brand: PingJingSemi
- Model: PJM2304NSA
- Package Type: SOT-23
- Revision: 3.0
- Date: Nov-2022
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | 3.6 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 15 | A | ||
| Maximum Power Dissipation | PD | 0.9 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Thermal Resistance, Junction-to-Ambient | RJA | Note2 | 139 | /W | ||
| Electrical Characteristics (Ta=25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | Note3, VDS=VGS,ID=250A | 1.2 | 1.5 | 2.2 | V |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=10V,ID=3.6A | -- | 35 | 58 | m |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=4.5V,ID=3A | -- | 45 | 73 | m |
| Forward Transconductance | gFS | Note3, VDS=5V,ID=1A | -- | 3 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHz | -- | 230 | -- | pF |
| Output Capacitance | Coss | -- | 40 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 17 | -- | pF | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=15V, ID=3.6A, VGS=4.5V,RGEN=6 | -- | 10 | -- | nS |
| Turn-on Rise Time | tr | -- | 50 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 10 | -- | nS | |
| Turn-off Fall Time | tf | -- | 20 | -- | nS | |
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=15V,ID=3.6A, VGS=10V | -- | 4 | -- | nC |
| Gate-Source Charge | Qgs | -- | 0.75 | -- | nC | |
| Gate-Drain Charge | Qg d | -- | 0.65 | -- | nC | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3, VGS=0V,IS=3.6A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | Note2 | -- | -- | 3.6 | A |
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