30 volt 5 amp transistor ROHM 2SCR542PT100 optimized for low frequency amplification and switching

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Product Description

2SCR542P Middle Power Transistor (30V / 5A)

The 2SCR542P is a middle power transistor designed for low frequency amplification and high-speed switching applications. It features low saturation voltage, with a typical VCE(sat) of 400mV (Max.) at IC/IB=2A/100mA, and high-speed switching capabilities.

Product Attributes

Brand: ROHM
Package: SOT-89 (MPT3) / SC-62
Origin: Not specified
Material: Not specified
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Conditions	Values	Unit
Collector-base voltage	VCBO		30	V
Collector-emitter voltage	VCEO		30	V
Emitter-base voltage	VEBO		6	V
Collector current	IC		5	A
Collector current (Pulsed)	ICP*1	Pw=10ms, Single Pulse	10	A
Power dissipation (Reference land)	PD*2	Each terminal mounted on a reference land.	0.5	W
Power dissipation (Ceramic board)	PD*3	Mounted on a ceramic board.(40400.7mm)	2.0	W
Junction temperature	Tj		150
Range of storage temperature	Tstg		-55 to +150
Collector-base breakdown voltage	BVCBO	IC = 100A	30	V
Collector-emitter breakdown voltage	BVCEO	IC = 1mA	30	V
Emitter-base breakdown voltage	BVEBO	IE = 100A	6	V
Collector cut-off current	ICBO	VCB = 30V	1.0	A
Emitter cut-off current	IEBO	VEB = 4V	1.0	A
Collector-emitter saturation voltage	VCE(sat)*4	IC = 2A, IB = 100mA (Pulsed)	400	mV
DC current gain	hFE	VCE = 2V, IC = 500mA	200 - 500	-
Transition frequency	fT*4	VCE = 10V, IE = -100mA, f = 100MHz (Pulsed)	250	MHz
Output capacitance	Cob	VCB = 10V, IE = 0A, f = 1MHz	25	pF
Turn-On time	ton	IC = 2.5A, IB1 = 250mA, IB2 = -250mA, VCC 10V, RL = 3.9 (See test circuit) (Pulsed)	40	ns
Storage time	tstg	(Pulsed)	320	ns
Fall time	tf	(Pulsed)	25	ns