High breakdown voltage transistor ROHM IMX8T108 in SMT6 package for in various electronic appliances

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Product Description

IMX8 Transistors Rev.A

The IMX8 is a general-purpose transistor featuring dual 2SC3906K chips within an SMT package. It offers a high breakdown voltage and is suitable for use in ordinary electronic equipment such as audio visual equipment, office-automation equipment, communications devices, electrical appliances, and electronic toys.

Product Attributes

Brand: ROHM
Package: SMT6
Marking Code: X8
Basic Ordering Unit: 3000 pieces
Note: Not Recommended for New Designs

Technical Specifications

Parameter	Symbol	Min.	Typ.	Max.	Unit	Conditions
Collector-base breakdown voltage	BVCBO	120	-	-	V	IC=50A
Collector-emitter breakdown voltage	BVCEO	120	-	-	V	IC=1mA
Emitter-base breakdown voltage	BVEBO	5	-	-	V	IE=50A
Collector cutoff current	ICBO	-	-	0.5	A	VCB=100V
Emitter cutoff current	IEBO	-	-	0.5	A	VEB=4V
DC current transfer ratio	hFE	-	-	820	-	VCE=6V, IC=2mA
Collector-emitter saturation voltage	VCE(sat)	-	-	0.5	V	IC/IB=10mA/1mA
Transition frequency	fT	-	140	-	MHz	VCE=12V, IE= -2mA, f=100MHz

Absolute Maximum Ratings

Parameter	Symbol	Limits	Unit	Notes
Collector-base voltage	VCBO	120	V
Collector-emitter voltage	VCEO	120	V
Emitter-base voltage	VEBO	5	V
Collector current	IC	50	mA
Power dissipation	Pc	300(TOTAL)	mW	* 200mW per element must not be exceeded.
Junction temperature	Tj	150	C
Storage temperature	Tstg	-55 to +150	C