China Low frequency power amplifier transistor ROHM 2SD2153T100V with high gain and low saturation voltage for sale

Low frequency power amplifier transistor ROHM 2SD2153T100V with high gain and low saturation voltage

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Product Description

Product Overview

The 2SD2153 is a high-gain amplifier transistor designed for low-frequency power amplification. It features low saturation voltage and high DC current gain, making it suitable for various amplification applications.

Product Attributes

Brand: ROHM
Package: SOT-89 (MPT3)
Marking: DN

Technical Specifications

Parameter	Symbol	Conditions	Values	Unit
Collector-base voltage	VCBO		30	V
Collector-emitter voltage	VCEO		25	V
Emitter-base voltage	VEBO		6	V
Collector current	IC		2	A
Collector current (peak)	ICP*1	Single Pulse, Pw=10ms	3	A
Power dissipation	PD*2	Each terminal mounted on a reference land.	0.5	W
Power dissipation	PD*3	Mounted on a 40x40x0.7mm ceramic board.	2.0	W
Junction temperature	Tj		150
Range of storage temperature	Tstg		-55 to +150
Collector-base breakdown voltage	BVCBO	IC = 50A	30	V
Collector-emitter breakdown voltage	BVCEO	IC = 1mA	25	V
Emitter-base breakdown voltage	BVEBO	IE = 50A	6	V
Collector cut-off current	ICBO	VCB = 20V	-	500 nA
Emitter cut-off current	IEBO	VEB = 5V	-	500 nA
Collector-emitter saturation voltage	VCE(sat)*4	IC = 1A, IB = 20mA	-	500 mV
DC current gain	hFE*4	VCE = 6V, IC = 0.5A	560 - 2700	-
Transition frequency	fT	VCE = 10V, IE = -10mA, f = 100MHz	-	110 MHz
Output capacitance	Cob	VCB = 10V, IE = 0A, f = 1MHz	-	22 pF

*1 Single Pulse, Pw=10ms
*2 Each terminal mounted on a reference land.
*3 Mounted on a 40x40x0.7mm ceramic board.
*4 Pulsed
hFE values are classified as follows: rank U (560-1200), V (820-1800), W (1200-2700)