Q Series Diode Power Integrations LQA16T300 300 Volt 16 Amp with Low QRR and Reduced EMI Filter Size

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Product Description

Product Overview

The LQA16T300 from Power Integrations is a 300 V, 16 A Q-Series diode featuring the lowest QRR of any 300 V Silicon diode. Its advanced recovery characteristics enhance efficiency, reduce EMI, and eliminate the need for snubbers. This diode is suitable for AC/DC and DC/DC output rectification, output and freewheeling applications, and DC-AC inverters, offering benefits such as increased efficiency, reduced EMI filter component size and count, and enabling extremely fast switching.

Product Attributes

Brand: Qspeed
Family: Q-Series
Package: TO-220AC
Certifications: RoHS Compliant
Material: Lead-free plating, Green mold compound
Halogen Free: Yes (per IEC 61249-2-21)

Technical Specifications

Symbol	Parameter	Conditions	Rating	Units
VRRM	Peak repetitive reverse voltage		300	V
IF(AVG)	Average forward current	TJ = 150 C, TC = 104 C	16	A
IFSM	Non-repetitive peak surge current	60 Hz, cycle	100	A
IFSM	Non-repetitive peak surge current	cycle of t=28 s Sinusoid, TC=25 C	350	A
TJ(MAX)	Maximum junction temperature		150	C
TSTG	Storage temperature		55 to 150	C
Lead soldering temperature	Leads at 1.6 mm from case, 10 sec	300	C
PD	Power dissipation	TC = 25 C	65.8	W
RJA	Junction to ambient resistance	TO-220	62	C/W
RJC	Junction to case resistance	TO-220	1.9	C/W
IR	Reverse current	VR = 300V, TJ = 25 C	25	A
IR	Reverse current	VR = 300V, TJ = 125 C	0.45	mA
VF	Forward voltage	IF = 16A, TJ = 25 C	1.6 - 1.9	V
VF	Forward voltage	IF = 16A, TJ = 150 C	1.4	V
CJ	Junction capacitance	VR = 10V, 1 MHz	50	pF
tRR	Reverse recovery time	TJ=25 C, dI/dt =200A/s, VR=200V, IF=16A	13	ns
tRR	Reverse recovery time	TJ=125 C, dI/dt =200A/s, VR=200V, IF=16A	25	ns
QRR	Reverse recovery charge	TJ=25 C, dI/dt =200A/s, VR=200V, IF=16A	11.5 - 15	nC
QRR	Reverse recovery charge	TJ=125 C, dI/dt =200A/s, VR=200V, IF=16A	44	nC
IRRM	Maximum reverse recovery current	TJ =25 C, dI/dt =200A/s, VR=200V, IF=16A	1.5 - 1.85	A
IRRM	Maximum reverse recovery current	TJ =125 C, dI/dt =200A/s, VR=200V, IF=16A	2.65	A
S	Softness factor	TJ =25 C, dI/dt =200A/s, VR=200V, IF=16A	0.7
S	Softness factor	TJ =125 C, dI/dt =200A/s, VR=200V, IF=16A	0.7